DIBL and subthreshold swing effect on carbon nanotube field effect transistor
Silicon based devices are getting problem with the limitation of channel length for fabrication of the miniature size. Short channel effects are creating such problem of the silicon devices. Thus CNT is a smart choice for replacement with the silicon. A brief analysis of the effect of short channel...
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| Format: | Proceeding Paper |
| Language: | English English |
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2015
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| Online Access: | http://irep.iium.edu.my/44492/ http://irep.iium.edu.my/44492/1/WCE2015_pp455-458.pdf http://irep.iium.edu.my/44492/4/44492_DIBL%20and%20subthreshold%20swing%20effect%20on%20carbon%20nanotube%20field%20effect%20transistor_SCOPUS.pdf |
| _version_ | 1848782616497487872 |
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| author | Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz |
| author_facet | Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz |
| author_sort | Farhana, Soheli |
| building | IIUM Repository |
| collection | Online Access |
| description | Silicon based devices are getting problem with the limitation of channel length for fabrication of the miniature size. Short channel effects are creating such problem of the silicon devices. Thus CNT is a smart choice for replacement with the silicon. A brief analysis of the effect of short channel carbon nanotube field effect transistor (CNTFET) is elucidated
in this paper. The analysis of the CNTFET model shows the Drain Induced Barrier lowering (DIBL) and sub-threshold Swing (S) of CNTFET with the channel of 14nm. The analysis of SS and DIBL shows the best electronics performance of CNT. High-k transistor can be fit for this material such as Hfo2 performs low subthreshold swing because of get large gate capacitance. This analysis is necessary for the design of a lower scaling channel of CNTFET. |
| first_indexed | 2025-11-14T16:08:17Z |
| format | Proceeding Paper |
| id | iium-44492 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T16:08:17Z |
| publishDate | 2015 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-444922018-03-06T04:05:20Z http://irep.iium.edu.my/44492/ DIBL and subthreshold swing effect on carbon nanotube field effect transistor Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz TK Electrical engineering. Electronics Nuclear engineering Silicon based devices are getting problem with the limitation of channel length for fabrication of the miniature size. Short channel effects are creating such problem of the silicon devices. Thus CNT is a smart choice for replacement with the silicon. A brief analysis of the effect of short channel carbon nanotube field effect transistor (CNTFET) is elucidated in this paper. The analysis of the CNTFET model shows the Drain Induced Barrier lowering (DIBL) and sub-threshold Swing (S) of CNTFET with the channel of 14nm. The analysis of SS and DIBL shows the best electronics performance of CNT. High-k transistor can be fit for this material such as Hfo2 performs low subthreshold swing because of get large gate capacitance. This analysis is necessary for the design of a lower scaling channel of CNTFET. 2015-07 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/44492/1/WCE2015_pp455-458.pdf application/pdf en http://irep.iium.edu.my/44492/4/44492_DIBL%20and%20subthreshold%20swing%20effect%20on%20carbon%20nanotube%20field%20effect%20transistor_SCOPUS.pdf Farhana, Soheli and Alam, A. H. M. Zahirul and Khan, Sheroz (2015) DIBL and subthreshold swing effect on carbon nanotube field effect transistor. In: World Congress on Engineering (WCE 2015), 1st-3rd July 2015, London, UK. http://www.iaeng.org/publication/WCE2015/WCE2015_pp455-458.pdf |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz DIBL and subthreshold swing effect on carbon nanotube field effect transistor |
| title | DIBL and subthreshold swing effect on carbon nanotube field effect transistor |
| title_full | DIBL and subthreshold swing effect on carbon nanotube field effect transistor |
| title_fullStr | DIBL and subthreshold swing effect on carbon nanotube field effect transistor |
| title_full_unstemmed | DIBL and subthreshold swing effect on carbon nanotube field effect transistor |
| title_short | DIBL and subthreshold swing effect on carbon nanotube field effect transistor |
| title_sort | dibl and subthreshold swing effect on carbon nanotube field effect transistor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://irep.iium.edu.my/44492/ http://irep.iium.edu.my/44492/ http://irep.iium.edu.my/44492/1/WCE2015_pp455-458.pdf http://irep.iium.edu.my/44492/4/44492_DIBL%20and%20subthreshold%20swing%20effect%20on%20carbon%20nanotube%20field%20effect%20transistor_SCOPUS.pdf |