Electronic state transition in cooperatively interacting point-defects in semiconductor crystals

Electronic state transition in cooperatively interacting point-defects in semiconductor crystals

Electron state transition of deep level point defects in a semiconductor crystal was studied. Low-temperature grown GaAs produced excess antisite As (AsGa) which produces localized spin when doped with Be. A nearly abrupt decrease of 1.7% of the resistance is detected at a temperature around 4 K whi...

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Bibliographic Details
Main Authors: Mohamed, Mohd Ambri, Majlis, Yeop Burhanuddin, Ani, Mohd Hanafi
Format: Proceeding Paper
Language:English
Published: IEEE 2014
Subjects:
TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:http://irep.iium.edu.my/40449/
http://irep.iium.edu.my/40449/1/electronic_state_transition_in_cooperatively_interacting_point_defect_in_semiconductor_crystals.pdf

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