Electronic state transition in cooperatively interacting point-defects in semiconductor crystals
Electron state transition of deep level point defects in a semiconductor crystal was studied. Low-temperature grown GaAs produced excess antisite As (AsGa) which produces localized spin when doped with Be. A nearly abrupt decrease of 1.7% of the resistance is detected at a temperature around 4 K whi...
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| Format: | Proceeding Paper |
| Language: | English |
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IEEE
2014
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| Online Access: | http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/1/electronic_state_transition_in_cooperatively_interacting_point_defect_in_semiconductor_crystals.pdf |
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| author | Mohamed, Mohd Ambri Majlis, Yeop Burhanuddin Ani, Mohd Hanafi |
| author_facet | Mohamed, Mohd Ambri Majlis, Yeop Burhanuddin Ani, Mohd Hanafi |
| author_sort | Mohamed, Mohd Ambri |
| building | IIUM Repository |
| collection | Online Access |
| description | Electron state transition of deep level point defects in a semiconductor crystal was studied. Low-temperature grown GaAs produced excess antisite As (AsGa) which produces localized spin when doped with Be. A nearly abrupt decrease of 1.7% of the resistance is detected at a temperature around 4 K which is consistent with abrupt decrease of magnetization. These observations are explained as a result of cooperative transition of electron states of AsGa defects. First-principal calculations of the electron state of an AsGa atom with a shallow acceptor Be show that at the transition an AsGa+ ion is displaced to the interstitial site and becomes a neutral atom and finally results in formation of a hole producing enhancement in conductivity. |
| first_indexed | 2025-11-14T15:57:49Z |
| format | Proceeding Paper |
| id | iium-40449 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T15:57:49Z |
| publishDate | 2014 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-404492017-08-25T01:05:29Z http://irep.iium.edu.my/40449/ Electronic state transition in cooperatively interacting point-defects in semiconductor crystals Mohamed, Mohd Ambri Majlis, Yeop Burhanuddin Ani, Mohd Hanafi TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Electron state transition of deep level point defects in a semiconductor crystal was studied. Low-temperature grown GaAs produced excess antisite As (AsGa) which produces localized spin when doped with Be. A nearly abrupt decrease of 1.7% of the resistance is detected at a temperature around 4 K which is consistent with abrupt decrease of magnetization. These observations are explained as a result of cooperative transition of electron states of AsGa defects. First-principal calculations of the electron state of an AsGa atom with a shallow acceptor Be show that at the transition an AsGa+ ion is displaced to the interstitial site and becomes a neutral atom and finally results in formation of a hole producing enhancement in conductivity. IEEE 2014-10-10 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/40449/1/electronic_state_transition_in_cooperatively_interacting_point_defect_in_semiconductor_crystals.pdf Mohamed, Mohd Ambri and Majlis, Yeop Burhanuddin and Ani, Mohd Hanafi (2014) Electronic state transition in cooperatively interacting point-defects in semiconductor crystals. In: 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, 27 - 29 August 2014, Berjaya Times Square Hotel Kuala Lumpur; Malaysia. http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6920844 10.1109/SMELEC.2014.6920844 |
| spellingShingle | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Mohamed, Mohd Ambri Majlis, Yeop Burhanuddin Ani, Mohd Hanafi Electronic state transition in cooperatively interacting point-defects in semiconductor crystals |
| title | Electronic state transition in cooperatively interacting
point-defects in semiconductor crystals |
| title_full | Electronic state transition in cooperatively interacting
point-defects in semiconductor crystals |
| title_fullStr | Electronic state transition in cooperatively interacting
point-defects in semiconductor crystals |
| title_full_unstemmed | Electronic state transition in cooperatively interacting
point-defects in semiconductor crystals |
| title_short | Electronic state transition in cooperatively interacting
point-defects in semiconductor crystals |
| title_sort | electronic state transition in cooperatively interacting
point-defects in semiconductor crystals |
| topic | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
| url | http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/ http://irep.iium.edu.my/40449/1/electronic_state_transition_in_cooperatively_interacting_point_defect_in_semiconductor_crystals.pdf |