Channel length effect on the saturation current and the threshold voltages of CNTFET

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Channel length effect on the saturation current and the threshold voltages of CNTFET

Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight. Field effect transistor (FET) has already come to its most maximum efficiency because of their reduced size leads to decrease in...

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Bibliographic Details
Main Authors:	Ani, Mohd Hanafi, Muhamad Ali, Abu Hanifah, Mohamed, Mohd Ambri
Format:	Proceeding Paper
Language:	English
Published:	IEEE 2014
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/1/Channel_length_effect_on_the_saturation_current_and_the_threshold_voltages_of_cntfet.pdf

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