Channel length effect on the saturation current and the threshold voltages of CNTFET
Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight. Field effect transistor (FET) has already come to its most maximum efficiency because of their reduced size leads to decrease in...
| Main Authors: | , , |
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| Format: | Proceeding Paper |
| Language: | English |
| Published: |
IEEE
2014
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| Online Access: | http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/1/Channel_length_effect_on_the_saturation_current_and_the_threshold_voltages_of_cntfet.pdf |
| _version_ | 1848781957577572352 |
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| author | Ani, Mohd Hanafi Muhamad Ali, Abu Hanifah Mohamed, Mohd Ambri |
| author_facet | Ani, Mohd Hanafi Muhamad Ali, Abu Hanifah Mohamed, Mohd Ambri |
| author_sort | Ani, Mohd Hanafi |
| building | IIUM Repository |
| collection | Online Access |
| description | Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight.
Field effect transistor (FET) has already come to its most
maximum efficiency because of their reduced size leads to
decrease in their capability in conducting electric. It is interested to embed ballistic electron transfer capability of CNTs on FET.
In this study, direct growth method of CNTs was employed to
attach it on FET electrodes with various terminal gaps. The
results show that CNTFET has successfully fabricated, with
averaged saturation currents always lowest at the channel size of 15μm. While their highest measured threshold voltage value is 4.291 V at 15 μm gap. This phenomenon is attributed to the change of CNTs’ chirality, which apparently changes the metallic type of CNTs to the semiconducting CNTs. |
| first_indexed | 2025-11-14T15:57:49Z |
| format | Proceeding Paper |
| id | iium-40448 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T15:57:49Z |
| publishDate | 2014 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-404482018-05-24T08:01:18Z http://irep.iium.edu.my/40448/ Channel length effect on the saturation current and the threshold voltages of CNTFET Ani, Mohd Hanafi Muhamad Ali, Abu Hanifah Mohamed, Mohd Ambri TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight. Field effect transistor (FET) has already come to its most maximum efficiency because of their reduced size leads to decrease in their capability in conducting electric. It is interested to embed ballistic electron transfer capability of CNTs on FET. In this study, direct growth method of CNTs was employed to attach it on FET electrodes with various terminal gaps. The results show that CNTFET has successfully fabricated, with averaged saturation currents always lowest at the channel size of 15μm. While their highest measured threshold voltage value is 4.291 V at 15 μm gap. This phenomenon is attributed to the change of CNTs’ chirality, which apparently changes the metallic type of CNTs to the semiconducting CNTs. IEEE 2014-10-14 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/40448/1/Channel_length_effect_on_the_saturation_current_and_the_threshold_voltages_of_cntfet.pdf Ani, Mohd Hanafi and Muhamad Ali, Abu Hanifah and Mohamed, Mohd Ambri (2014) Channel length effect on the saturation current and the threshold voltages of CNTFET. In: 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, 27 - 29 August 2014, Berjaya Times Square Hotel Kuala Lumpur; Malaysia. http://ieeexplore.ieee.org/ 10.1109/SMELEC.2014.6920844 |
| spellingShingle | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ani, Mohd Hanafi Muhamad Ali, Abu Hanifah Mohamed, Mohd Ambri Channel length effect on the saturation current and the threshold voltages of CNTFET |
| title | Channel length effect on the saturation current and the threshold voltages of CNTFET |
| title_full | Channel length effect on the saturation current and the threshold voltages of CNTFET |
| title_fullStr | Channel length effect on the saturation current and the threshold voltages of CNTFET |
| title_full_unstemmed | Channel length effect on the saturation current and the threshold voltages of CNTFET |
| title_short | Channel length effect on the saturation current and the threshold voltages of CNTFET |
| title_sort | channel length effect on the saturation current and the threshold voltages of cntfet |
| topic | TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices |
| url | http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/ http://irep.iium.edu.my/40448/1/Channel_length_effect_on_the_saturation_current_and_the_threshold_voltages_of_cntfet.pdf |