Analysis of electrical responses of MEMS piezoresistive microcantilever
In this paper, an optimization of mechanical and electrical performance of single-layer silicon piezoresistive microcantilever (PRM) sensor in which both piezoresistor and microcantilever structures are made of the same material of single-crystalline silicon was discussed. Using CoventorWare 2008, t...
| Main Authors: | , , , |
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| Format: | Proceeding Paper |
| Language: | English English |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/39191/ http://irep.iium.edu.my/39191/1/39191.pdf http://irep.iium.edu.my/39191/4/39191_Analysis%20of%20electrical%20responses%20of%20MEMS_Scopus.pdf |
| _version_ | 1848781738184015872 |
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| author | Ab Rahim, Rosminazuin Ookar Abubakkar, Sheik Fareed Bais, Badariah Yeop Majlis, Burhanuddin |
| author_facet | Ab Rahim, Rosminazuin Ookar Abubakkar, Sheik Fareed Bais, Badariah Yeop Majlis, Burhanuddin |
| author_sort | Ab Rahim, Rosminazuin |
| building | IIUM Repository |
| collection | Online Access |
| description | In this paper, an optimization of mechanical and electrical performance of single-layer silicon piezoresistive microcantilever (PRM) sensor in which both piezoresistor and microcantilever structures are made of the same material of single-crystalline silicon was discussed. Using CoventorWare 2008, the mechanical and electrical behaviors of the PRM structure was investigated by studying few contributing factors that affect the performance of the device. The performance of PRM sensor was investigated by observing the effects of applied loads to the current change and sensitivity of the device. Apart from that, the effects of thermal noise to the device’s performance were also investigated. From the simulation results, at applied loads between 1 to 10 µN, significant current increase of about 0.094% was observed. This current increase can be translated into an increase of sensitivity in the device. Simulation results also revealed that at temperature change between 290 K to 300 K, the PRM sensor shows insignificant change to sensitivity. |
| first_indexed | 2025-11-14T15:54:20Z |
| format | Proceeding Paper |
| id | iium-39191 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T15:54:20Z |
| publishDate | 2014 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-391912017-09-19T12:07:19Z http://irep.iium.edu.my/39191/ Analysis of electrical responses of MEMS piezoresistive microcantilever Ab Rahim, Rosminazuin Ookar Abubakkar, Sheik Fareed Bais, Badariah Yeop Majlis, Burhanuddin T Technology (General) In this paper, an optimization of mechanical and electrical performance of single-layer silicon piezoresistive microcantilever (PRM) sensor in which both piezoresistor and microcantilever structures are made of the same material of single-crystalline silicon was discussed. Using CoventorWare 2008, the mechanical and electrical behaviors of the PRM structure was investigated by studying few contributing factors that affect the performance of the device. The performance of PRM sensor was investigated by observing the effects of applied loads to the current change and sensitivity of the device. Apart from that, the effects of thermal noise to the device’s performance were also investigated. From the simulation results, at applied loads between 1 to 10 µN, significant current increase of about 0.094% was observed. This current increase can be translated into an increase of sensitivity in the device. Simulation results also revealed that at temperature change between 290 K to 300 K, the PRM sensor shows insignificant change to sensitivity. 2014 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/39191/1/39191.pdf application/pdf en http://irep.iium.edu.my/39191/4/39191_Analysis%20of%20electrical%20responses%20of%20MEMS_Scopus.pdf Ab Rahim, Rosminazuin and Ookar Abubakkar, Sheik Fareed and Bais, Badariah and Yeop Majlis, Burhanuddin (2014) Analysis of electrical responses of MEMS piezoresistive microcantilever. In: 5th International Conference on Computer and Communication Engineering (ICCCE 2014), 23th - 25th September 2014, Kuala Lumpur. http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7031616 |
| spellingShingle | T Technology (General) Ab Rahim, Rosminazuin Ookar Abubakkar, Sheik Fareed Bais, Badariah Yeop Majlis, Burhanuddin Analysis of electrical responses of MEMS piezoresistive microcantilever |
| title | Analysis of electrical responses of MEMS piezoresistive microcantilever |
| title_full | Analysis of electrical responses of MEMS piezoresistive microcantilever |
| title_fullStr | Analysis of electrical responses of MEMS piezoresistive microcantilever |
| title_full_unstemmed | Analysis of electrical responses of MEMS piezoresistive microcantilever |
| title_short | Analysis of electrical responses of MEMS piezoresistive microcantilever |
| title_sort | analysis of electrical responses of mems piezoresistive microcantilever |
| topic | T Technology (General) |
| url | http://irep.iium.edu.my/39191/ http://irep.iium.edu.my/39191/ http://irep.iium.edu.my/39191/1/39191.pdf http://irep.iium.edu.my/39191/4/39191_Analysis%20of%20electrical%20responses%20of%20MEMS_Scopus.pdf |