Novel low-voltage RF-MEMS switch: design and simulation
This paper presents a novel design of a low-voltage radio frequency (RF) micro-electromechanical system (MEMS) switch with its electro-mechanical and microwave characteristics’ simulation, as well as its virtual fabrication process. The RF-MEMS switch employs a shunt capacitive structure. There are...
| Main Authors: | , , |
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| Format: | Proceeding Paper |
| Language: | English English |
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Institute of Electrical and Electronics Engineers Inc.
2014
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| Online Access: | http://irep.iium.edu.my/39111/ http://irep.iium.edu.my/39111/1/39111_Novel%20low-voltage%20RF-MEMS%20switch.pdf http://irep.iium.edu.my/39111/2/39111_Novel%20low-voltage%20RF-MEMS%20switch_SCOPUS.pdf |
| _version_ | 1848781725595860992 |
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| author | Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin |
| author_facet | Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin |
| author_sort | Ma, Li Ya |
| building | IIUM Repository |
| collection | Online Access |
| description | This paper presents a novel design of a low-voltage radio frequency (RF) micro-electromechanical system (MEMS) switch with its electro-mechanical and microwave characteristics’ simulation, as well as its virtual fabrication process. The RF-MEMS switch employs a shunt capacitive structure. There are eight beams supporting a rectangular membrane to suspend over a coplanar waveguide (CPW) transmission line. The outer four crab-leg beams are used to bypass the signal line to the ground by the coupling capacitance and via when switch is actuated; and the inner four serpentine beams are used to supply the DC actuation voltage to the membrane. The developed RF-MEMS switch has a very low pull-in voltage of 3.53V; and the maximum von Mises stress under actuated condition is 13.1808MPa. The capacitance ratio of the switch is 218.5, with switch-on capacitance of 68fF. The switch’s microwave characteristics are obtained by AWR Design Environment 10® simulation; its insertion loss and isolation is -1.7532dB and -18.394dB respectively at 20GHz; and at frequency of 60GHz, the insertion loss is -7.2499dB and isolation is -27.293dB. A simple low-cost three-mask process with photoresist (PR-S1800) as sacrifice layer to release the membrane is proposed in this design; and a virtual fabricated device is simulated using IntelliFab v8.7® software. |
| first_indexed | 2025-11-14T15:54:08Z |
| format | Proceeding Paper |
| id | iium-39111 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T15:54:08Z |
| publishDate | 2014 |
| publisher | Institute of Electrical and Electronics Engineers Inc. |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-391112017-09-26T09:03:27Z http://irep.iium.edu.my/39111/ Novel low-voltage RF-MEMS switch: design and simulation Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin T Technology (General) This paper presents a novel design of a low-voltage radio frequency (RF) micro-electromechanical system (MEMS) switch with its electro-mechanical and microwave characteristics’ simulation, as well as its virtual fabrication process. The RF-MEMS switch employs a shunt capacitive structure. There are eight beams supporting a rectangular membrane to suspend over a coplanar waveguide (CPW) transmission line. The outer four crab-leg beams are used to bypass the signal line to the ground by the coupling capacitance and via when switch is actuated; and the inner four serpentine beams are used to supply the DC actuation voltage to the membrane. The developed RF-MEMS switch has a very low pull-in voltage of 3.53V; and the maximum von Mises stress under actuated condition is 13.1808MPa. The capacitance ratio of the switch is 218.5, with switch-on capacitance of 68fF. The switch’s microwave characteristics are obtained by AWR Design Environment 10® simulation; its insertion loss and isolation is -1.7532dB and -18.394dB respectively at 20GHz; and at frequency of 60GHz, the insertion loss is -7.2499dB and isolation is -27.293dB. A simple low-cost three-mask process with photoresist (PR-S1800) as sacrifice layer to release the membrane is proposed in this design; and a virtual fabricated device is simulated using IntelliFab v8.7® software. Institute of Electrical and Electronics Engineers Inc. 2014 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/39111/1/39111_Novel%20low-voltage%20RF-MEMS%20switch.pdf application/pdf en http://irep.iium.edu.my/39111/2/39111_Novel%20low-voltage%20RF-MEMS%20switch_SCOPUS.pdf Ma, Li Ya and Soin, Norhayati and Nordin, Anis Nurashikin (2014) Novel low-voltage RF-MEMS switch: design and simulation. In: IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 27th-29th Aug 2014, Kuala Lumpur. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6920816&tag=1 10.1109/SMELEC.2014.6920816 |
| spellingShingle | T Technology (General) Ma, Li Ya Soin, Norhayati Nordin, Anis Nurashikin Novel low-voltage RF-MEMS switch: design and simulation |
| title | Novel low-voltage RF-MEMS switch: design and simulation |
| title_full | Novel low-voltage RF-MEMS switch: design and simulation |
| title_fullStr | Novel low-voltage RF-MEMS switch: design and simulation |
| title_full_unstemmed | Novel low-voltage RF-MEMS switch: design and simulation |
| title_short | Novel low-voltage RF-MEMS switch: design and simulation |
| title_sort | novel low-voltage rf-mems switch: design and simulation |
| topic | T Technology (General) |
| url | http://irep.iium.edu.my/39111/ http://irep.iium.edu.my/39111/ http://irep.iium.edu.my/39111/ http://irep.iium.edu.my/39111/1/39111_Novel%20low-voltage%20RF-MEMS%20switch.pdf http://irep.iium.edu.my/39111/2/39111_Novel%20low-voltage%20RF-MEMS%20switch_SCOPUS.pdf |