Optimum performance of carbon nanotube field effect transistor
Phenomenological predictions have been elucidated in this paper. The predictions are elaborated for the field effect transistor using carbon nanotube (CNT) technology. CNTs have small band gap compare to other traditional semiconductor technologies. The modeling of a single wall nanotube with opti...
| Main Authors: | , , |
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| Format: | Proceeding Paper |
| Language: | English English |
| Published: |
2014
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| Online Access: | http://irep.iium.edu.my/38989/ http://irep.iium.edu.my/38989/1/WCECS2014_pp284-288.pdf http://irep.iium.edu.my/38989/4/38989_Optimum%20performance%20of%20carbon%20nanotube%20field%20effect%20transistor.SCOPUS.pdf |
| _version_ | 1848781703991001088 |
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| author | Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz |
| author_facet | Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz |
| author_sort | Farhana, Soheli |
| building | IIUM Repository |
| collection | Online Access |
| description | Phenomenological predictions have been elucidated in this paper. The predictions are elaborated for the field effect transistor using carbon nanotube (CNT) technology. CNTs have small band gap compare to other traditional semiconductor technologies. The modeling of a single wall
nanotube with optimum bandgap for the designing of the carbon nanotube (CNTFET) is the aim of this work. Analysis of I-V characteristics of CNTFET with the drain current-voltage analytical relation enables the lower energy consumption from the proposed design. In this research, the optimum carbon nanotube (CNTs) is analyzed where the bandgap is 0.45eV as well as the diameter is 1.95nm. Modeling of CNTFET will be
useful for semiconductor industries in order to manufacture the nano scale device. |
| first_indexed | 2025-11-14T15:53:47Z |
| format | Proceeding Paper |
| id | iium-38989 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-14T15:53:47Z |
| publishDate | 2014 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-389892018-06-11T04:38:58Z http://irep.iium.edu.my/38989/ Optimum performance of carbon nanotube field effect transistor Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz TK Electrical engineering. Electronics Nuclear engineering Phenomenological predictions have been elucidated in this paper. The predictions are elaborated for the field effect transistor using carbon nanotube (CNT) technology. CNTs have small band gap compare to other traditional semiconductor technologies. The modeling of a single wall nanotube with optimum bandgap for the designing of the carbon nanotube (CNTFET) is the aim of this work. Analysis of I-V characteristics of CNTFET with the drain current-voltage analytical relation enables the lower energy consumption from the proposed design. In this research, the optimum carbon nanotube (CNTs) is analyzed where the bandgap is 0.45eV as well as the diameter is 1.95nm. Modeling of CNTFET will be useful for semiconductor industries in order to manufacture the nano scale device. 2014-10-22 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/38989/1/WCECS2014_pp284-288.pdf application/pdf en http://irep.iium.edu.my/38989/4/38989_Optimum%20performance%20of%20carbon%20nanotube%20field%20effect%20transistor.SCOPUS.pdf Farhana, Soheli and Alam, A. H. M. Zahirul and Khan, Sheroz (2014) Optimum performance of carbon nanotube field effect transistor. In: World Congress on Engineering and Computer Science 2014, October 22 - 24, 2014, San Francisco, USA. http://www.iaeng.org/publication/WCECS2014/ |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz Optimum performance of carbon nanotube field effect transistor |
| title | Optimum performance of carbon nanotube field effect transistor |
| title_full | Optimum performance of carbon nanotube field effect transistor |
| title_fullStr | Optimum performance of carbon nanotube field effect transistor |
| title_full_unstemmed | Optimum performance of carbon nanotube field effect transistor |
| title_short | Optimum performance of carbon nanotube field effect transistor |
| title_sort | optimum performance of carbon nanotube field effect transistor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://irep.iium.edu.my/38989/ http://irep.iium.edu.my/38989/ http://irep.iium.edu.my/38989/1/WCECS2014_pp284-288.pdf http://irep.iium.edu.my/38989/4/38989_Optimum%20performance%20of%20carbon%20nanotube%20field%20effect%20transistor.SCOPUS.pdf |