Electrical characterisation of highly doped triangular silicon nanowires

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Electrical characterisation of highly doped triangular silicon nanowires

A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. Initially, the samples were doped with phosphorus using the diffusion process resultin...

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Bibliographic Details
Main Authors:	Za'bah, Nor Farahidah, Kwa, Kelvin S. K., O’Neill, Anthony
Format:	Article
Language:	English English
Published:	Trans Tech Publications Ltd., Switzerland 2014
Subjects:	TA401 Materials of engineering and construction
Online Access:	http://irep.iium.edu.my/38886/ http://irep.iium.edu.my/38886/1/Electrical_Characterization_of_Highly_Doped_Triangular_Silicon_Nanowires.pdf http://irep.iium.edu.my/38886/4/38886_Electrical%20characterisation_Scopus.pdf

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