Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation
Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radia tion with pneumatic transfer system of TRIGA Mark-II react...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/37047/ http://irep.iium.edu.my/37047/4/electrical_characterization.pdf |
| _version_ | 1848781342802706432 |
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| author | Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, Muhammad Rawi Ab Rahim, Rosminazuin Azman, Amelia Wong Hasbullah, Nurul Fadzlin |
| author_facet | Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, Muhammad Rawi Ab Rahim, Rosminazuin Azman, Amelia Wong Hasbullah, Nurul Fadzlin |
| author_sort | Oo, Myo Min |
| building | IIUM Repository |
| collection | Online Access |
| description | Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radia tion with pneumatic transfer system of
TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irra-diated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation
can cause displacement dam age in the bulk layer of the transistor structure and gamma radia -tion can induce ionizing damage in the oxide layer of emit ter-base depletion layer. The cur rent gain degradation is believed to be governed by the in creasing re combination current in the
base-emitter depletion region. |
| first_indexed | 2025-11-14T15:48:03Z |
| format | Article |
| id | iium-37047 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T15:48:03Z |
| publishDate | 2014 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-370472025-02-08T08:17:05Z http://irep.iium.edu.my/37047/ Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, Muhammad Rawi Ab Rahim, Rosminazuin Azman, Amelia Wong Hasbullah, Nurul Fadzlin TK Electrical engineering. Electronics Nuclear engineering Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radia tion with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irra-diated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement dam age in the bulk layer of the transistor structure and gamma radia -tion can induce ionizing damage in the oxide layer of emit ter-base depletion layer. The cur rent gain degradation is believed to be governed by the in creasing re combination current in the base-emitter depletion region. 2014 Article PeerReviewed application/pdf en http://irep.iium.edu.my/37047/4/electrical_characterization.pdf Oo, Myo Min and Alang Md Rashid, Nahrul Khair and Abdul Karim, Julia and Mohamed Zin, Muhammad Rawi and Ab Rahim, Rosminazuin and Azman, Amelia Wong and Hasbullah, Nurul Fadzlin (2014) Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation. Nuclear Technology and Radiation Protection, 29 (1). pp. 46-52. ISSN 1451-3994 http://dx.doi.org/10.2298/NTRP1401046O doi:10.2298/NTRP1401046O |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Oo, Myo Min Alang Md Rashid, Nahrul Khair Abdul Karim, Julia Mohamed Zin, Muhammad Rawi Ab Rahim, Rosminazuin Azman, Amelia Wong Hasbullah, Nurul Fadzlin Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation |
| title | Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation |
| title_full | Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation |
| title_fullStr | Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation |
| title_full_unstemmed | Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation |
| title_short | Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation |
| title_sort | electrical characterization of commercial npn bipolar junction transistors under neutron and gamma irradiation |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://irep.iium.edu.my/37047/ http://irep.iium.edu.my/37047/ http://irep.iium.edu.my/37047/ http://irep.iium.edu.my/37047/4/electrical_characterization.pdf |