Classical trajectory study of adsorption and surface diffusion of Si on Si(100)

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Classical trajectory study of adsorption and surface diffusion of Si on Si(100)

Adsorption and surfacediffusion of silicon on the Si(100) plane have been investigated by classical trajectory methods using a realistic potential‐energy surface. The calculated sticking probability for adsorption is 0.965 at 1500 K and is independent of temperature. The diffusion coefficient for Si...

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Bibliographic Details
Main Authors:	Ibrahim Ali , Noorbatcha, Lionel M. , Raff, Donald L. , Thompson
Format:	Article
Language:	English
Published:	American Institute of Physics (AIP) 1984
Subjects:	QD Chemistry
Online Access:	http://irep.iium.edu.my/35866/ http://irep.iium.edu.my/35866/1/JCP1984.pdf

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