Classical trajectory study of adsorption and surface diffusion of Si on Si(100)
Adsorption and surfacediffusion of silicon on the Si(100) plane have been investigated by classical trajectory methods using a realistic potential‐energy surface. The calculated sticking probability for adsorption is 0.965 at 1500 K and is independent of temperature. The diffusion coefficient for Si...
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| Format: | Article |
| Language: | English |
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American Institute of Physics (AIP)
1984
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| Online Access: | http://irep.iium.edu.my/35866/ http://irep.iium.edu.my/35866/1/JCP1984.pdf |
| _version_ | 1848781123704848384 |
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| author | Ibrahim Ali , Noorbatcha Lionel M. , Raff Donald L. , Thompson |
| author_facet | Ibrahim Ali , Noorbatcha Lionel M. , Raff Donald L. , Thompson |
| author_sort | Ibrahim Ali , Noorbatcha |
| building | IIUM Repository |
| collection | Online Access |
| description | Adsorption and surfacediffusion of silicon on the Si(100) plane have been investigated by classical trajectory methods using a realistic potential‐energy surface. The calculated sticking probability for adsorption is 0.965 at 1500 K and is independent of temperature. The diffusion coefficient for Si on Si(100) is evaluated by modeling the diffusion process as the jumping of the adatom from one adsorption site to another. The diffusion coefficient calculated by this approach is given by D=(6.35±1.44)×10− 4 exp(−3.63±0.47 kcal mol− 1/R T) cm2 s− 1. This value is found to be in good agreement with the diffusion coefficients calculated from the long‐time behavior of the mean square displacement and from the integrated velocity autocorrelation function. The activation energy for diffusion is found to be less than the reported experimental value of 4.6 kcal mol− 1 for the diffusion of Si on Si(111). The diffusion of Si on Si(100) is found to be directional, occurring only along channels described by the intersection of the (022̄) planes with the (110) plane. Transverse diffusion in directions described by the intersection of the (022) planes with the (100) plane is a much higher‐energy process. |
| first_indexed | 2025-11-14T15:44:34Z |
| format | Article |
| id | iium-35866 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T15:44:34Z |
| publishDate | 1984 |
| publisher | American Institute of Physics (AIP) |
| recordtype | eprints |
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| spelling | iium-358662014-03-09T02:17:10Z http://irep.iium.edu.my/35866/ Classical trajectory study of adsorption and surface diffusion of Si on Si(100) Ibrahim Ali , Noorbatcha Lionel M. , Raff Donald L. , Thompson QD Chemistry Adsorption and surfacediffusion of silicon on the Si(100) plane have been investigated by classical trajectory methods using a realistic potential‐energy surface. The calculated sticking probability for adsorption is 0.965 at 1500 K and is independent of temperature. The diffusion coefficient for Si on Si(100) is evaluated by modeling the diffusion process as the jumping of the adatom from one adsorption site to another. The diffusion coefficient calculated by this approach is given by D=(6.35±1.44)×10− 4 exp(−3.63±0.47 kcal mol− 1/R T) cm2 s− 1. This value is found to be in good agreement with the diffusion coefficients calculated from the long‐time behavior of the mean square displacement and from the integrated velocity autocorrelation function. The activation energy for diffusion is found to be less than the reported experimental value of 4.6 kcal mol− 1 for the diffusion of Si on Si(111). The diffusion of Si on Si(100) is found to be directional, occurring only along channels described by the intersection of the (022̄) planes with the (110) plane. Transverse diffusion in directions described by the intersection of the (022) planes with the (100) plane is a much higher‐energy process. American Institute of Physics (AIP) 1984-04-15 Article PeerReviewed application/pdf en http://irep.iium.edu.my/35866/1/JCP1984.pdf Ibrahim Ali , Noorbatcha and Lionel M. , Raff and Donald L. , Thompson (1984) Classical trajectory study of adsorption and surface diffusion of Si on Si(100). Journal of Chemical Physics , 81 (8). 3715-3721. ISSN 0021-9606 http://scitation.aip.org/content/aip/journal/jcp/81/8/10.1063/1.448122 DOI: 10.1063/1.448122 |
| spellingShingle | QD Chemistry Ibrahim Ali , Noorbatcha Lionel M. , Raff Donald L. , Thompson Classical trajectory study of adsorption and surface diffusion of Si on Si(100) |
| title | Classical trajectory study of adsorption and surface diffusion of Si on Si(100) |
| title_full | Classical trajectory study of adsorption and surface diffusion of Si on Si(100) |
| title_fullStr | Classical trajectory study of adsorption and surface diffusion of Si on Si(100) |
| title_full_unstemmed | Classical trajectory study of adsorption and surface diffusion of Si on Si(100) |
| title_short | Classical trajectory study of adsorption and surface diffusion of Si on Si(100) |
| title_sort | classical trajectory study of adsorption and surface diffusion of si on si(100) |
| topic | QD Chemistry |
| url | http://irep.iium.edu.my/35866/ http://irep.iium.edu.my/35866/ http://irep.iium.edu.my/35866/ http://irep.iium.edu.my/35866/1/JCP1984.pdf |