A phenomenological approach to the calculation of the diffusion coefficient for Si on Si(111) using classical trajectories

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A phenomenological approach to the calculation of the diffusion coefficient for Si on Si(111) using classical trajectories

A general method to calculate a lower bound and an estimated upper bound for the surface diffusion coefficient from jump frequencies of an adatom from one absorption site to another has been formulated. This method has been applied to the surface diffusion of Si on Si(111). Keating's potential...

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Bibliographic Details
Main Authors:	Ibrahim Ali , Noorbatcha, Lionel M. , Raff, Donald L. , Thompson
Format:	Article
Language:	English
Published:	American Institute of Physics (AIP) 1985
Subjects:	QD Chemistry
Online Access:	http://irep.iium.edu.my/35865/ http://irep.iium.edu.my/35865/1/JCP1985.pdf

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