Effect of lattice potential upon the surface diffusion of Si on Si(100)

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Effect of lattice potential upon the surface diffusion of Si on Si(100)

The surfacediffusion of Si atoms on Si(100) is examined using three different lattice potentials suggested by Keating, by Weber, and by Baraff e t a l. Jump frequencies of Si atoms between adjacent adsorbtion sites are computed on each potential surface at 800, 1000, 1200, and 1500 K using classic...

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Bibliographic Details
Main Authors:	Ibrahim Ali , Noorbatcha, L.M, Raff, D.L, Thompson
Format:	Article
Language:	English
Published:	American Institute of Physics (AIP) 1985
Subjects:	QD Chemistry
Online Access:	http://irep.iium.edu.my/35142/ http://irep.iium.edu.my/35142/1/JCP1985_Si%28100%29.pdf

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