Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation

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Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation

This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron particle towards the electrical performances of gallium arsenide (GaAs) and gallium nitride (GaN) p-n based diodes. The investigations are carried out through current-voltage (I-V) and capacitance-volt...

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Bibliographic Details
Main Authors:	Ahmad Fauzi, Dhiyauddin, Alang Md Rashid, Nahrul Khair, Abdul Karim, Julia, Mohamed Zin, Mohamed Rawi, Hasbullah, Nurul Fadzlin, Sheik Fareed, O A
Format:	Article
Language:	English
Published:	IOP Publishing 2013
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/33632/ http://irep.iium.edu.my/33632/1/electrical_performances.pdf

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