Transition of electron transport process in Be-doped low-temperature-grown GaAs layer
Effects of the structure change of antisite-As (AsGa) defects on the electron transport property in Be-doped low-temperature-grown GaAs layers were investigated. In this material AsGa atoms cooperatively change their positions between substitutional and interstitial sites. We found an abrupt change...
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| Format: | Article |
| Language: | English |
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American Institute of Physics
2013
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| Online Access: | http://irep.iium.edu.my/31780/ http://irep.iium.edu.my/31780/2/JAP2013-.pdf |
| _version_ | 1848780451734355968 |
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| author | Mohamed, Mohd Ambri Otsuka, Nobuo Pham, Tien Lam |
| author_facet | Mohamed, Mohd Ambri Otsuka, Nobuo Pham, Tien Lam |
| author_sort | Mohamed, Mohd Ambri |
| building | IIUM Repository |
| collection | Online Access |
| description | Effects of the structure change of antisite-As (AsGa) defects on the electron transport property in Be-doped low-temperature-grown GaAs layers were investigated. In this material AsGa atoms cooperatively change their positions between substitutional and interstitial sites. We found an abrupt change in the resistance of a sample at a temperature around 3 K where a discontinuous decrease of the magnetization was also observed. The mechanism of the transition of the electron transport property is explained by first-principles calculations of the electron state of an AsGa atom accompanied with a shallow acceptor Be atom. At the transition, AsGa+ ions are cooperatively displaced to interstitial sites and become neutral atoms, which results in generation of holes in the valence band. The mechanism of the discontinuous change of the electron transport process in this material is discussed in connection with existing mechanisms such as those of metal-insulator transitions. |
| first_indexed | 2025-11-14T15:33:53Z |
| format | Article |
| id | iium-31780 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T15:33:53Z |
| publishDate | 2013 |
| publisher | American Institute of Physics |
| recordtype | eprints |
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| spelling | iium-317802013-09-11T11:36:58Z http://irep.iium.edu.my/31780/ Transition of electron transport process in Be-doped low-temperature-grown GaAs layer Mohamed, Mohd Ambri Otsuka, Nobuo Pham, Tien Lam QC Physics TK Electrical engineering. Electronics Nuclear engineering Effects of the structure change of antisite-As (AsGa) defects on the electron transport property in Be-doped low-temperature-grown GaAs layers were investigated. In this material AsGa atoms cooperatively change their positions between substitutional and interstitial sites. We found an abrupt change in the resistance of a sample at a temperature around 3 K where a discontinuous decrease of the magnetization was also observed. The mechanism of the transition of the electron transport property is explained by first-principles calculations of the electron state of an AsGa atom accompanied with a shallow acceptor Be atom. At the transition, AsGa+ ions are cooperatively displaced to interstitial sites and become neutral atoms, which results in generation of holes in the valence band. The mechanism of the discontinuous change of the electron transport process in this material is discussed in connection with existing mechanisms such as those of metal-insulator transitions. American Institute of Physics 2013-08-30 Article PeerReviewed application/pdf en http://irep.iium.edu.my/31780/2/JAP2013-.pdf Mohamed, Mohd Ambri and Otsuka, Nobuo and Pham, Tien Lam (2013) Transition of electron transport process in Be-doped low-temperature-grown GaAs layer. Journal of Applied Physics, 114 (083716). pp. 1-4. ISSN 0021-8979 |
| spellingShingle | QC Physics TK Electrical engineering. Electronics Nuclear engineering Mohamed, Mohd Ambri Otsuka, Nobuo Pham, Tien Lam Transition of electron transport process in Be-doped low-temperature-grown GaAs layer |
| title | Transition of electron transport process in Be-doped low-temperature-grown GaAs layer |
| title_full | Transition of electron transport process in Be-doped low-temperature-grown GaAs layer |
| title_fullStr | Transition of electron transport process in Be-doped low-temperature-grown GaAs layer |
| title_full_unstemmed | Transition of electron transport process in Be-doped low-temperature-grown GaAs layer |
| title_short | Transition of electron transport process in Be-doped low-temperature-grown GaAs layer |
| title_sort | transition of electron transport process in be-doped low-temperature-grown gaas layer |
| topic | QC Physics TK Electrical engineering. Electronics Nuclear engineering |
| url | http://irep.iium.edu.my/31780/ http://irep.iium.edu.my/31780/2/JAP2013-.pdf |