Device characteristics of carbon nanotube transistor fabricated by direct growth method
We have fabricated carbon nanotube �CNT� field-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteris...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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American Institute of Physics Inc.
2008
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/1/ambri_apl.pdf |
| _version_ | 1848780204044976128 |
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| author | Inami, Nobuhito Mohamed, Mohd Ambri Shikoh, Eiji Fujiwara, Akihiko |
| author_facet | Inami, Nobuhito Mohamed, Mohd Ambri Shikoh, Eiji Fujiwara, Akihiko |
| author_sort | Inami, Nobuhito |
| building | IIUM Repository |
| collection | Online Access |
| description | We have fabricated carbon nanotube �CNT� field-effect transistors �FETs� by direct growth of
single-wall CNTs between the source and drain electrodes, and investigated their device
characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence
of device characteristics are consistent with device operation of the Schottky-type FET. The carrier
injection barrier heights for both the electron and hole carriers show small values of 17– 74 meV,
without any additional specific treatment after device fabrication. |
| first_indexed | 2025-11-14T15:29:57Z |
| format | Article |
| id | iium-29896 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T15:29:57Z |
| publishDate | 2008 |
| publisher | American Institute of Physics Inc. |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-298962013-07-25T08:13:58Z http://irep.iium.edu.my/29896/ Device characteristics of carbon nanotube transistor fabricated by direct growth method Inami, Nobuhito Mohamed, Mohd Ambri Shikoh, Eiji Fujiwara, Akihiko QC Physics TA165 Engineering instruments, meters, etc. Industrial instrumentation TK7885 Computer engineering We have fabricated carbon nanotube �CNT� field-effect transistors �FETs� by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device characteristics are consistent with device operation of the Schottky-type FET. The carrier injection barrier heights for both the electron and hole carriers show small values of 17– 74 meV, without any additional specific treatment after device fabrication. American Institute of Physics Inc. 2008-06-18 Article PeerReviewed application/pdf en http://irep.iium.edu.my/29896/1/ambri_apl.pdf Inami, Nobuhito and Mohamed, Mohd Ambri and Shikoh, Eiji and Fujiwara, Akihiko (2008) Device characteristics of carbon nanotube transistor fabricated by direct growth method. Applied Physics Letters, 92 (24). ISSN 0003-6951 http://apl.aip.org/resource/1/applab/v92/i24/p243115_s1 10.1063/1.2949075 |
| spellingShingle | QC Physics TA165 Engineering instruments, meters, etc. Industrial instrumentation TK7885 Computer engineering Inami, Nobuhito Mohamed, Mohd Ambri Shikoh, Eiji Fujiwara, Akihiko Device characteristics of carbon nanotube transistor fabricated by direct growth method |
| title | Device characteristics of carbon nanotube transistor fabricated by direct growth method |
| title_full | Device characteristics of carbon nanotube transistor fabricated by direct growth method |
| title_fullStr | Device characteristics of carbon nanotube transistor fabricated by direct growth method |
| title_full_unstemmed | Device characteristics of carbon nanotube transistor fabricated by direct growth method |
| title_short | Device characteristics of carbon nanotube transistor fabricated by direct growth method |
| title_sort | device characteristics of carbon nanotube transistor fabricated by direct growth method |
| topic | QC Physics TA165 Engineering instruments, meters, etc. Industrial instrumentation TK7885 Computer engineering |
| url | http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/ http://irep.iium.edu.my/29896/1/ambri_apl.pdf |