Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers

QR Code

Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers

Beryllium-doped GaAs layers grown at low temperatures by molecular-beam epitaxy contain localized spins associated with unpaired sp electrons of As Ga + ions. Interactions of these localized spins are investigated by measuring the magnetization with a superconducting quantum interference device and...

Full description

Bibliographic Details
Main Authors:	Bae, K. W., Mohamed, Mohd Ambri, Jung, DaeWon, Otsuka, Nobuo
Format:	Article
Language:	English
Published:	American Institute of Physics 2011
Subjects:	QC Physics QD Chemistry TK7885 Computer engineering
Online Access:	http://irep.iium.edu.my/29879/ http://irep.iium.edu.my/29879/1/Direct_exchange_interaction_of_localized_spins_associated_with_unpaired_sp_electrons_in_Be-doped_lT-GaAs.pdf

Similar Items

Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers
by: Mohamed, Mohd Ambri, et al.
Published: (2011)

Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers
by: Mohamed, Mohd Ambri, et al.
Published: (2013)

Transition of electron transport process in Be-doped low-temperature-grown GaAs layer
by: Mohamed, Mohd Ambri, et al.
Published: (2013)

Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
by: Mohamed, Mohd Ambri, et al.
Published: (2013)

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
by: Fay, Mike W., et al.
Published: (2008)

Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
by: Prando, G.A., et al.
Published: (2018)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
by: Roslan, Sharizar, et al.
Published: (2006)

Thermal stablity of heavily carbon-doped GaAs
by: Meng , Suan Uang, et al.
Published: (2004)

Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes
by: Rodrigues, D.H., et al.
Published: (2016)

Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices
by: Gordo, V. Orsi, et al.
Published: (2017)

Optical properties of nanostructured semiconductors grown by MBE on non-conventional GaAs substrates
by: Khatab, Almontaser bellah Fathy
Published: (2014)

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations
by: Jameel, D.A., et al.
Published: (2016)

Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
by: Rosnita, M, et al.
Published: (2012)

Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
by: Han, Y., et al.
Published: (2005)

Distribution of ga vacancies in Zn diffused GaAs
by: Zahari Mohamed Darus,, et al.
Published: (1992)

InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures
by: Muhammad, Rosnita, et al.
Published: (2008)

Microstructural characterisation of GaMnN ferromagnetic semiconductors grown on (001) oriented GaAs substrates by plasma assisted molecular beam epitaxy
by: Han, Yisong
Published: (2006)

Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High-Index GaAs Planes
by: Gunes, Mustafa, et al.
Published: (2017)

Self-healing in fractured GaAs nanowires
by: Wang, Jun, et al.
Published: (2012)

The electron-phonon interaction in GaAs/(AlGa)As quantum wells
by: Cross, Andrew John
Published: (2001)

Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor
by: Faris Azim Ahmad Fajri, Faris Azim, et al.
Published: (2021)

STRUCTURAL AND OPTICAL PROPERTIES OF GaAs1-xBix/AlyGa1-yAs QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY
by: Almunyif, Amjad
Published: (2024)

Electrical properties of sulfonated polyaniline (Span) and polyaniline (Pani) polymers grown on conventional and high index GaAs substrates
by: Jameel, Dler Adil
Published: (2016)

Electrical charactrization of III-V antimonide/GaAs heterostuctures grown by Interfacial Misfit molecular beam epitaxy technique
by: Aziz, Mohsin
Published: (2014)

Experimental Study Of InGaP/GaAs DHBTS With Composite Collector
by: Poh, Zi-Song
Published: (2009)

Conversion Efficiency Improvement in GaAs Solar Cells
by: Das, Narottam, et al.
Published: (2014)

Self-healing of GaAs nanowires: An atomistic study
by: Wang, Jun, et al.
Published: (2012)

Surface morphology studies of single and double layer In0.5Ga0.5As/GaAs quantum dots grown by stranski-krastanow growth modes
by: Aryanto, Didik, et al.
Published: (2009)

TEM assessment of As-doped GaN epitaxial layers grown on sapphire
by: Fay, Mike W., et al.
Published: (2004)

Voltage- and light-controlled spin properties of a two-dimensional hole gas in p-type GaAs/AlAs resonant tunneling diodes
by: Galeti, H.V.A., et al.
Published: (2018)

Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)

Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)

An analysis of the electron trajectory in the vicinity of GaAs quantum dot
by: Hanafi Ithnin,, et al.
Published: (2014)

Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature
by: Bhunia, Amit, et al.
Published: (2018)

Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013)

Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
by: Ahmad Kamarudin, Mazliana, et al.
Published: (2011)

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
by: Zainal, Norzaini
Published: (2016)

Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device
by: Parimon, Norfarariyanti, et al.
Published: (2008)

Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)

Photoluminescence and raman scattering of GaAs1-xBix alloy
by: L. Hasanah,, et al.
Published: (2020)