Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers

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Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers

Magnetic properties resulting from localized spins associated with antisite arsenic ions AsGa+ in Be-doped low-temperature-grown GaAs (LT-GaAs) layers were studied by measuring the magnetization of lift-off samples. With fast cooling, the magnetization of samples at 1.8 K becomes significantly lower...

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Bibliographic Details
Main Authors:	Mohamed, Mohd Ambri, Tien Lam, Pham, Bae, K. W., Otsuka, Nobuo
Format:	Article
Language:	English
Published:	American Institute of Physics Inc. 2011
Subjects:	QC Physics QD Chemistry TK7885 Computer engineering
Online Access:	http://irep.iium.edu.my/29874/ http://irep.iium.edu.my/29874/1/JApplPhys_110_123716.pdf

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