Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
Neutron radiation testing was performed on silicon and GaAs diodes to investigate changes in the device parameters after neutron exposure. Californium-252 source was used to irradiate these diodes up to total dose of 1117.87mSv. The effects of nuclear radiation on the forward and reverse current-vol...
| Main Authors: | , , , |
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| Format: | Proceeding Paper |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/29528/ http://irep.iium.edu.my/29528/1/electrical_properties.pdf |
| _version_ | 1848780139809210368 |
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| author | Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Alang Md Rashid, Nahrul Khair Abdullah , Jaafar |
| author_facet | Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Alang Md Rashid, Nahrul Khair Abdullah , Jaafar |
| author_sort | Che Omar, Nuurul Iffah |
| building | IIUM Repository |
| collection | Online Access |
| description | Neutron radiation testing was performed on silicon and GaAs diodes to investigate changes in the device parameters after neutron exposure. Californium-252 source was used to irradiate these diodes up to total dose of 1117.87mSv. The effects of nuclear radiation on the forward and reverse current-voltage (I-V) characteristics of Silicon and GaAs diodes were studied at room temperature. It was found that the magnitudes of forward bias electrical characteristics were in most instances unaffected by irradiation in both materials. The increments in TSKS5400S GaAs infrared emitting diode reverse currents were large after irradiation. These changes were interpreted as effects of displacement damage generating generation-recombination currents due to defects created. However, reverse bias (RB) characteristics of 1N4148 silicon diodes showed decrement in dark current. This is attributed to the type of diodes used. |
| first_indexed | 2025-11-14T15:28:55Z |
| format | Proceeding Paper |
| id | iium-29528 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T15:28:55Z |
| publishDate | 2012 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-295282013-09-18T02:48:19Z http://irep.iium.edu.my/29528/ Electrical properties of neutron-irradiated silicon and GaAs commercial diodes Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Alang Md Rashid, Nahrul Khair Abdullah , Jaafar TK Electrical engineering. Electronics Nuclear engineering Neutron radiation testing was performed on silicon and GaAs diodes to investigate changes in the device parameters after neutron exposure. Californium-252 source was used to irradiate these diodes up to total dose of 1117.87mSv. The effects of nuclear radiation on the forward and reverse current-voltage (I-V) characteristics of Silicon and GaAs diodes were studied at room temperature. It was found that the magnitudes of forward bias electrical characteristics were in most instances unaffected by irradiation in both materials. The increments in TSKS5400S GaAs infrared emitting diode reverse currents were large after irradiation. These changes were interpreted as effects of displacement damage generating generation-recombination currents due to defects created. However, reverse bias (RB) characteristics of 1N4148 silicon diodes showed decrement in dark current. This is attributed to the type of diodes used. 2012 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/29528/1/electrical_properties.pdf Che Omar, Nuurul Iffah and Hasbullah, Nurul Fadzlin and Alang Md Rashid, Nahrul Khair and Abdullah , Jaafar (2012) Electrical properties of neutron-irradiated silicon and GaAs commercial diodes. In: 2012 IEEE Symposium on Industrial Electronics & Applications (ISIEA), 23-26 Sept. 2012 , Bandung, Indonesia. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6496678&tag=1 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Alang Md Rashid, Nahrul Khair Abdullah , Jaafar Electrical properties of neutron-irradiated silicon and GaAs commercial diodes |
| title | Electrical properties of neutron-irradiated silicon and GaAs commercial diodes |
| title_full | Electrical properties of neutron-irradiated silicon and GaAs commercial diodes |
| title_fullStr | Electrical properties of neutron-irradiated silicon and GaAs commercial diodes |
| title_full_unstemmed | Electrical properties of neutron-irradiated silicon and GaAs commercial diodes |
| title_short | Electrical properties of neutron-irradiated silicon and GaAs commercial diodes |
| title_sort | electrical properties of neutron-irradiated silicon and gaas commercial diodes |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://irep.iium.edu.my/29528/ http://irep.iium.edu.my/29528/ http://irep.iium.edu.my/29528/1/electrical_properties.pdf |