Trench DMOS interface trap characterization by three-terminal charge pumping measurement

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Trench DMOS interface trap characterization by three-terminal charge pumping measurement

The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal–Oxide–Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control moni...

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Bibliographic Details
Main Authors:	Izzudin , Ismah, Kamaruddin , Mohd. Hanif, Nordin, Anis Nurashikin, Soin, Norhayati
Format:	Article
Language:	English
Published:	Elsevier 2012
Subjects:	TK7885 Computer engineering
Online Access:	http://irep.iium.edu.my/27128/ http://irep.iium.edu.my/27128/1/S0026271412003150

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