Trench DMOS interface trap characterization by three-terminal charge pumping measurement
The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal–Oxide–Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control moni...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2012
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| Online Access: | http://irep.iium.edu.my/27128/ http://irep.iium.edu.my/27128/1/S0026271412003150 |
| _version_ | 1848779765383692288 |
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| author | Izzudin , Ismah Kamaruddin , Mohd. Hanif Nordin, Anis Nurashikin Soin, Norhayati |
| author_facet | Izzudin , Ismah Kamaruddin , Mohd. Hanif Nordin, Anis Nurashikin Soin, Norhayati |
| author_sort | Izzudin , Ismah |
| building | IIUM Repository |
| collection | Online Access |
| description | The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal–Oxide–Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control monitor kerf (PCM-Kerf) structures were successfully measured during experiments. The plot shapes and trends are in agreement with previously reported work. A correlation study was performed with the numerical value of charge pumping current and experimental results on PCM-Kerf for a planar DMOS with 4 terminals. The charge pumping measurements showed very high source–drain current after approximately −2 V Vbase value.
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| first_indexed | 2025-11-14T15:22:58Z |
| format | Article |
| id | iium-27128 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T15:22:58Z |
| publishDate | 2012 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-271282012-11-29T00:00:51Z http://irep.iium.edu.my/27128/ Trench DMOS interface trap characterization by three-terminal charge pumping measurement Izzudin , Ismah Kamaruddin , Mohd. Hanif Nordin, Anis Nurashikin Soin, Norhayati TK7885 Computer engineering The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal–Oxide–Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control monitor kerf (PCM-Kerf) structures were successfully measured during experiments. The plot shapes and trends are in agreement with previously reported work. A correlation study was performed with the numerical value of charge pumping current and experimental results on PCM-Kerf for a planar DMOS with 4 terminals. The charge pumping measurements showed very high source–drain current after approximately −2 V Vbase value. Elsevier 2012-12 Article PeerReviewed application/pdf en http://irep.iium.edu.my/27128/1/S0026271412003150 Izzudin , Ismah and Kamaruddin , Mohd. Hanif and Nordin, Anis Nurashikin and Soin, Norhayati (2012) Trench DMOS interface trap characterization by three-terminal charge pumping measurement. Microelectronics Reliability, 52 (12). pp. 2914-2919. http://www.sciencedirect.com/science/article/pii/S0026271412003150 |
| spellingShingle | TK7885 Computer engineering Izzudin , Ismah Kamaruddin , Mohd. Hanif Nordin, Anis Nurashikin Soin, Norhayati Trench DMOS interface trap characterization by three-terminal charge pumping measurement |
| title | Trench DMOS interface trap characterization by three-terminal charge pumping measurement |
| title_full | Trench DMOS interface trap characterization by three-terminal charge pumping measurement |
| title_fullStr | Trench DMOS interface trap characterization by three-terminal charge pumping measurement |
| title_full_unstemmed | Trench DMOS interface trap characterization by three-terminal charge pumping measurement |
| title_short | Trench DMOS interface trap characterization by three-terminal charge pumping measurement |
| title_sort | trench dmos interface trap characterization by three-terminal charge pumping measurement |
| topic | TK7885 Computer engineering |
| url | http://irep.iium.edu.my/27128/ http://irep.iium.edu.my/27128/ http://irep.iium.edu.my/27128/1/S0026271412003150 |