Surface integrity and removal rate of silicon sputtered with focused ion beam

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Surface integrity and removal rate of silicon sputtered with focused ion beam

This paper investigates the micromachinability of (100) silicon by focused gallium ion beam sputtering at normal incident angle. Effect of the beam parameters (dose, aperture and accelerating voltage) and the beam scanning parameters (pixel spacing, dwell time, retracing time and scanning type) on t...

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Bibliographic Details
Main Authors:	Hung, NguyenPhu, Ali, Mohammad Yeakub, Fu, Yongqi, Ong, NanShing, Tay, MengLeong
Format:	Article
Language:	English
Published:	Taylor and Francis Inc. 2001
Subjects:	TS Manufactures
Online Access:	http://irep.iium.edu.my/27113/ http://irep.iium.edu.my/27113/1/025_MST_2001_5%282%29_239-254.pdf

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