Surface roughness of sputtered silicon. II. Model verification

Experimental verification of the mathematical surface roughness model for sputtered silicon was performed. The beam shape and its significant level of intensity were determined first by measuring the topography of craters sputtered by focused ion beam (FIB). Then the beam function was generated for...

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Main Authors: Ali, Mohammad Yeakub, Hung, NguyenPhu
Format: Article
Language:English
Published: Taylor and Francis Inc. 2001
Subjects:
Online Access:http://irep.iium.edu.my/27112/
http://irep.iium.edu.my/27112/1/024_MaMP_2001_16%283%29_315-329.pdf
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author Ali, Mohammad Yeakub
Hung, NguyenPhu
author_facet Ali, Mohammad Yeakub
Hung, NguyenPhu
author_sort Ali, Mohammad Yeakub
building IIUM Repository
collection Online Access
description Experimental verification of the mathematical surface roughness model for sputtered silicon was performed. The beam shape and its significant level of intensity were determined first by measuring the topography of craters sputtered by focused ion beam (FIB). Then the beam function was generated for various combinations of beam parameters. The material function was developed both by theoretical and experimental analysis. These two functions were then used in the model to calculate the theoretical surface roughness. Microsurface analysis was formed by FIB sputtering of a (100) silicon wafer. The surface roughness at the bottom of the sputtered features was then measured using an atomic force microscope. The theoretical surface roughness was found to be within ±1 and ±5 nm of the measured surface roughness with the measurement uncertainty (standard deviation) of about ±0.36 and ±0.85 nm for R a and R t, respectively.
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spelling iium-271122013-07-23T07:39:55Z http://irep.iium.edu.my/27112/ Surface roughness of sputtered silicon. II. Model verification Ali, Mohammad Yeakub Hung, NguyenPhu TS Manufactures Experimental verification of the mathematical surface roughness model for sputtered silicon was performed. The beam shape and its significant level of intensity were determined first by measuring the topography of craters sputtered by focused ion beam (FIB). Then the beam function was generated for various combinations of beam parameters. The material function was developed both by theoretical and experimental analysis. These two functions were then used in the model to calculate the theoretical surface roughness. Microsurface analysis was formed by FIB sputtering of a (100) silicon wafer. The surface roughness at the bottom of the sputtered features was then measured using an atomic force microscope. The theoretical surface roughness was found to be within ±1 and ±5 nm of the measured surface roughness with the measurement uncertainty (standard deviation) of about ±0.36 and ±0.85 nm for R a and R t, respectively. Taylor and Francis Inc. 2001 Article PeerReviewed application/pdf en http://irep.iium.edu.my/27112/1/024_MaMP_2001_16%283%29_315-329.pdf Ali, Mohammad Yeakub and Hung, NguyenPhu (2001) Surface roughness of sputtered silicon. II. Model verification. Materials and Manufacturing Processes, 16 (3). pp. 315-329. ISSN 1042-6914 http://www.tandfonline.com/doi/full/10.1081/AMP-100107376#.Ue4xGdJHIrU 10.1081/AMP-100107377
spellingShingle TS Manufactures
Ali, Mohammad Yeakub
Hung, NguyenPhu
Surface roughness of sputtered silicon. II. Model verification
title Surface roughness of sputtered silicon. II. Model verification
title_full Surface roughness of sputtered silicon. II. Model verification
title_fullStr Surface roughness of sputtered silicon. II. Model verification
title_full_unstemmed Surface roughness of sputtered silicon. II. Model verification
title_short Surface roughness of sputtered silicon. II. Model verification
title_sort surface roughness of sputtered silicon. ii. model verification
topic TS Manufactures
url http://irep.iium.edu.my/27112/
http://irep.iium.edu.my/27112/
http://irep.iium.edu.my/27112/
http://irep.iium.edu.my/27112/1/024_MaMP_2001_16%283%29_315-329.pdf