Top-down fabrication of single crystal silicon nanowire using optical lithography
A method for fabricating single crystal silicon nanowires is presented using top-down optical lithography and anisotropic etching. Wire diameters as small as 10 nm are demonstrated using silicon on insulator substrates. Structural characterization confirms that wires are straight, have a triangular...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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American Institute of Physics
2012
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| Online Access: | http://irep.iium.edu.my/25004/ http://irep.iium.edu.my/25004/1/Top-down_fabrication_of_single_crystal_silicon_nanowire_using_optical.pdf |
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| author | Za'bah, Nor Farahidah Kwa, Kelvin S. K. Bowen, Leon Mendis, Budhika O'Neill, Anthony |
| author_facet | Za'bah, Nor Farahidah Kwa, Kelvin S. K. Bowen, Leon Mendis, Budhika O'Neill, Anthony |
| author_sort | Za'bah, Nor Farahidah |
| building | IIUM Repository |
| collection | Online Access |
| description | A method for fabricating single crystal silicon nanowires is presented using top-down optical lithography and anisotropic etching. Wire diameters as small as 10 nm are demonstrated using silicon on insulator substrates. Structural characterization confirms that wires are straight, have a
triangular cross section and are without breakages over lengths of tens of microns. Electrical characterization indicates bulk like mobility values, not strongly influenced by surface scattering or quantum confinement. Processing is compatible with conventional silicon technology having much larger critical dimensions. Integrating such nanowires with a mature CMOS technology offers an inexpensive route to their exploitation as sensors. |
| first_indexed | 2025-11-14T15:17:02Z |
| format | Article |
| id | iium-25004 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T15:17:02Z |
| publishDate | 2012 |
| publisher | American Institute of Physics |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-250042012-08-03T00:00:21Z http://irep.iium.edu.my/25004/ Top-down fabrication of single crystal silicon nanowire using optical lithography Za'bah, Nor Farahidah Kwa, Kelvin S. K. Bowen, Leon Mendis, Budhika O'Neill, Anthony QC Physics TA401 Materials of engineering and construction A method for fabricating single crystal silicon nanowires is presented using top-down optical lithography and anisotropic etching. Wire diameters as small as 10 nm are demonstrated using silicon on insulator substrates. Structural characterization confirms that wires are straight, have a triangular cross section and are without breakages over lengths of tens of microns. Electrical characterization indicates bulk like mobility values, not strongly influenced by surface scattering or quantum confinement. Processing is compatible with conventional silicon technology having much larger critical dimensions. Integrating such nanowires with a mature CMOS technology offers an inexpensive route to their exploitation as sensors. American Institute of Physics 2012-07-19 Article PeerReviewed application/pdf en http://irep.iium.edu.my/25004/1/Top-down_fabrication_of_single_crystal_silicon_nanowire_using_optical.pdf Za'bah, Nor Farahidah and Kwa, Kelvin S. K. and Bowen, Leon and Mendis, Budhika and O'Neill, Anthony (2012) Top-down fabrication of single crystal silicon nanowire using optical lithography. Journal of Applied Physics, 112. 024309-024309. ISSN 0021-8979 |
| spellingShingle | QC Physics TA401 Materials of engineering and construction Za'bah, Nor Farahidah Kwa, Kelvin S. K. Bowen, Leon Mendis, Budhika O'Neill, Anthony Top-down fabrication of single crystal silicon nanowire using optical lithography |
| title | Top-down fabrication of single crystal silicon nanowire using optical lithography
|
| title_full | Top-down fabrication of single crystal silicon nanowire using optical lithography
|
| title_fullStr | Top-down fabrication of single crystal silicon nanowire using optical lithography
|
| title_full_unstemmed | Top-down fabrication of single crystal silicon nanowire using optical lithography
|
| title_short | Top-down fabrication of single crystal silicon nanowire using optical lithography
|
| title_sort | top-down fabrication of single crystal silicon nanowire using optical lithography |
| topic | QC Physics TA401 Materials of engineering and construction |
| url | http://irep.iium.edu.my/25004/ http://irep.iium.edu.my/25004/1/Top-down_fabrication_of_single_crystal_silicon_nanowire_using_optical.pdf |