Novel nuclear technology for controlled production of n-type semiconductor
Use of semiconductors for power electronics requires unique material characteristics because of the high power levels flowing in the devices. In this research, NTD silicon was try to be developed by using Cf-252 isotopic neutron radioactive sourced (1.6 mCi) instead of using neutron source from nu...
| Main Authors: | , , |
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| Format: | Proceeding Paper |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/23157/ http://irep.iium.edu.my/23157/1/p50.pdf |
| _version_ | 1848779119294152704 |
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| author | Sutjipto, Agus Geter Edy Yahya, Ruslan Muhida, Riza |
| author_facet | Sutjipto, Agus Geter Edy Yahya, Ruslan Muhida, Riza |
| author_sort | Sutjipto, Agus Geter Edy |
| building | IIUM Repository |
| collection | Online Access |
| description | Use of semiconductors for power electronics requires unique material characteristics because of the
high power levels flowing in the devices. In this research, NTD silicon was try to be developed by using
Cf-252 isotopic neutron radioactive sourced (1.6 mCi) instead of using neutron source from nuclear
reactor. It was found that concentration of P between 0.5 and 14 wt% could be produced by irradiating
silicon using netron between 1 and 5 days. It was proved that the irradiation time did not change the
mechanical property of the material. |
| first_indexed | 2025-11-14T15:12:42Z |
| format | Proceeding Paper |
| id | iium-23157 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T15:12:42Z |
| publishDate | 2010 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-231572012-06-21T05:17:58Z http://irep.iium.edu.my/23157/ Novel nuclear technology for controlled production of n-type semiconductor Sutjipto, Agus Geter Edy Yahya, Ruslan Muhida, Riza TJ Mechanical engineering and machinery Use of semiconductors for power electronics requires unique material characteristics because of the high power levels flowing in the devices. In this research, NTD silicon was try to be developed by using Cf-252 isotopic neutron radioactive sourced (1.6 mCi) instead of using neutron source from nuclear reactor. It was found that concentration of P between 0.5 and 14 wt% could be produced by irradiating silicon using netron between 1 and 5 days. It was proved that the irradiation time did not change the mechanical property of the material. 2010 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/23157/1/p50.pdf Sutjipto, Agus Geter Edy and Yahya, Ruslan and Muhida, Riza (2010) Novel nuclear technology for controlled production of n-type semiconductor. In: IIUM Research, Innovation & Invention Exhibition (IRIIE 2010), 26-27 January 2010, Kuala Lumpur. http://www.iium.edu.my/irie/10/sub10/author/list_p.php |
| spellingShingle | TJ Mechanical engineering and machinery Sutjipto, Agus Geter Edy Yahya, Ruslan Muhida, Riza Novel nuclear technology for controlled production of n-type semiconductor |
| title | Novel nuclear technology for controlled production of n-type semiconductor |
| title_full | Novel nuclear technology for controlled production of n-type semiconductor |
| title_fullStr | Novel nuclear technology for controlled production of n-type semiconductor |
| title_full_unstemmed | Novel nuclear technology for controlled production of n-type semiconductor |
| title_short | Novel nuclear technology for controlled production of n-type semiconductor |
| title_sort | novel nuclear technology for controlled production of n-type semiconductor |
| topic | TJ Mechanical engineering and machinery |
| url | http://irep.iium.edu.my/23157/ http://irep.iium.edu.my/23157/ http://irep.iium.edu.my/23157/1/p50.pdf |