Reverse leakage current mechanisms in quantum dot laser structures

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Reverse leakage current mechanisms in quantum dot laser structures

Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the rever...

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Bibliographic Details
Main Authors:	Hasbullah, Nurul Fadzlin, David, John P. R.
Format:	Proceeding Paper
Language:	English English
Published:	2011
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/17653/ http://irep.iium.edu.my/17653/1/IEEE_MnN_vs_7.pdf http://irep.iium.edu.my/17653/4/Reverse_leakage_current_mechanisms_in_quantum.pdf

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