Design of a low noise amplifier with GaAs MESFET at Ku-Band

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Design of a low noise amplifier with GaAs MESFET at Ku-Band

Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2. The LNA is designed to operate at 12GHz.

Bibliographic Details
Main Authors:	Islam, Md. Rafiqul, Alam, A. H. M. Zahirul, Khan, Sheroz, Shabana, Arafat A. A
Format:	Proceeding Paper
Language:	English
Published:	IEEE 2010
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/1632/ http://irep.iium.edu.my/1632/1/05556786.pdf

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