Design of a low noise amplifier with GaAs MESFET at Ku-Band
Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2. The LNA is designed to operate at 12GHz.
| Main Authors: | , , , |
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| Format: | Proceeding Paper |
| Language: | English |
| Published: |
IEEE
2010
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/1632/ http://irep.iium.edu.my/1632/1/05556786.pdf |
| _version_ | 1848775888312729600 |
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| author | Islam, Md. Rafiqul Alam, A. H. M. Zahirul Khan, Sheroz Shabana, Arafat A. A |
| author_facet | Islam, Md. Rafiqul Alam, A. H. M. Zahirul Khan, Sheroz Shabana, Arafat A. A |
| author_sort | Islam, Md. Rafiqul |
| building | IIUM Repository |
| collection | Online Access |
| description | Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2. The LNA is designed to operate at 12GHz. |
| first_indexed | 2025-11-14T14:21:21Z |
| format | Proceeding Paper |
| id | iium-1632 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T14:21:21Z |
| publishDate | 2010 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-16322017-08-02T08:38:17Z http://irep.iium.edu.my/1632/ Design of a low noise amplifier with GaAs MESFET at Ku-Band Islam, Md. Rafiqul Alam, A. H. M. Zahirul Khan, Sheroz Shabana, Arafat A. A TK Electrical engineering. Electronics Nuclear engineering Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2. The LNA is designed to operate at 12GHz. IEEE 2010 Proceeding Paper PeerReviewed application/pdf en http://irep.iium.edu.my/1632/1/05556786.pdf Islam, Md. Rafiqul and Alam, A. H. M. Zahirul and Khan, Sheroz and Shabana, Arafat A. A (2010) Design of a low noise amplifier with GaAs MESFET at Ku-Band. In: International Conference on Computer and Communication Engineering (ICCCE 2010), 11-13 May 2010, Kuala Lumpur. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5556786&tag=1 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Islam, Md. Rafiqul Alam, A. H. M. Zahirul Khan, Sheroz Shabana, Arafat A. A Design of a low noise amplifier with GaAs MESFET at Ku-Band |
| title | Design of a low noise amplifier with GaAs MESFET at Ku-Band |
| title_full | Design of a low noise amplifier with GaAs MESFET at Ku-Band |
| title_fullStr | Design of a low noise amplifier with GaAs MESFET at Ku-Band |
| title_full_unstemmed | Design of a low noise amplifier with GaAs MESFET at Ku-Band |
| title_short | Design of a low noise amplifier with GaAs MESFET at Ku-Band |
| title_sort | design of a low noise amplifier with gaas mesfet at ku-band |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://irep.iium.edu.my/1632/ http://irep.iium.edu.my/1632/ http://irep.iium.edu.my/1632/1/05556786.pdf |