Electroluminescence studies of modulation p-doped quantum dot laser structures
Electroluminescence (EL) measurements have been performed on InAs/InGaAs/GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. Temperature-dependent EL measurements show a reduction of the integrated EL intensity (IEL) with increasing temperature but with the size of this red...
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| Format: | Article |
| Language: | English |
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IEEE
2010
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| Online Access: | http://irep.iium.edu.my/1478/ http://irep.iium.edu.my/1478/1/Electroluminescence_Studies_of_Modulation.pdf |
| _version_ | 1848775863598841856 |
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| author | Hasbullah, Nurul Fadzlin Hopkinson, Mark Alexander, Ryan R. Hogg, Richard A. David, John P.R Badcock, Tom J. Mowbray, David J. |
| author_facet | Hasbullah, Nurul Fadzlin Hopkinson, Mark Alexander, Ryan R. Hogg, Richard A. David, John P.R Badcock, Tom J. Mowbray, David J. |
| author_sort | Hasbullah, Nurul Fadzlin |
| building | IIUM Repository |
| collection | Online Access |
| description | Electroluminescence (EL) measurements have been performed on InAs/InGaAs/GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. Temperature-dependent EL measurements show a reduction of the integrated EL intensity (IEL) with increasing temperature but with the size of this reduction decreasing with increasing doping level. An increase in the activation energy controlling the EL quenching is found with increasing p-doping. This is attributed to an increased coulombic attraction between the extrinsic holes and injected electrons. At room temperature and low injection current, a superlinear dependence of the IEL on the injection current is observed. This superlinearity decreases as the p-doping increases and this behavior indicates a reduction in the amount of nonradiative recombination. This reduction is believed to be caused by the saturation of nonradiative centers and/or reduced escape of electrons to the GaAs barrier due to the increased confinement potential.
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| first_indexed | 2025-11-14T14:20:57Z |
| format | Article |
| id | iium-1478 |
| institution | International Islamic University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T14:20:57Z |
| publishDate | 2010 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | iium-14782012-01-26T05:34:03Z http://irep.iium.edu.my/1478/ Electroluminescence studies of modulation p-doped quantum dot laser structures Hasbullah, Nurul Fadzlin Hopkinson, Mark Alexander, Ryan R. Hogg, Richard A. David, John P.R Badcock, Tom J. Mowbray, David J. TK Electrical engineering. Electronics Nuclear engineering Electroluminescence (EL) measurements have been performed on InAs/InGaAs/GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. Temperature-dependent EL measurements show a reduction of the integrated EL intensity (IEL) with increasing temperature but with the size of this reduction decreasing with increasing doping level. An increase in the activation energy controlling the EL quenching is found with increasing p-doping. This is attributed to an increased coulombic attraction between the extrinsic holes and injected electrons. At room temperature and low injection current, a superlinear dependence of the IEL on the injection current is observed. This superlinearity decreases as the p-doping increases and this behavior indicates a reduction in the amount of nonradiative recombination. This reduction is believed to be caused by the saturation of nonradiative centers and/or reduced escape of electrons to the GaAs barrier due to the increased confinement potential. IEEE 2010-12 Article PeerReviewed application/pdf en http://irep.iium.edu.my/1478/1/Electroluminescence_Studies_of_Modulation.pdf Hasbullah, Nurul Fadzlin and Hopkinson, Mark and Alexander, Ryan R. and Hogg, Richard A. and David, John P.R and Badcock, Tom J. and Mowbray, David J. (2010) Electroluminescence studies of modulation p-doped quantum dot laser structures. IEEE Journal of Quantum Electronics, 46 (12). pp. 1847-1853. ISSN 0018-9197 http://dx.doi.org/10.1109/JQE.2010.2049828 doi:10.1109/JQE.2010.2049828 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Hasbullah, Nurul Fadzlin Hopkinson, Mark Alexander, Ryan R. Hogg, Richard A. David, John P.R Badcock, Tom J. Mowbray, David J. Electroluminescence studies of modulation p-doped quantum dot laser structures |
| title | Electroluminescence studies of modulation p-doped quantum dot laser structures |
| title_full | Electroluminescence studies of modulation p-doped quantum dot laser structures |
| title_fullStr | Electroluminescence studies of modulation p-doped quantum dot laser structures |
| title_full_unstemmed | Electroluminescence studies of modulation p-doped quantum dot laser structures |
| title_short | Electroluminescence studies of modulation p-doped quantum dot laser structures |
| title_sort | electroluminescence studies of modulation p-doped quantum dot laser structures |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://irep.iium.edu.my/1478/ http://irep.iium.edu.my/1478/ http://irep.iium.edu.my/1478/ http://irep.iium.edu.my/1478/1/Electroluminescence_Studies_of_Modulation.pdf |