Effect of modulation p-doping on the optical properties of quantum dot laser structure

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Effect of modulation p-doping on the optical properties of quantum dot laser structure

Temperature dependence electroluminescence (EL) measurements have been performed on In(Ga)As/ GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. It is found that the IEL decreases with increasing temperature with the size of reduction decreases with increasing doping lev...

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Bibliographic Details
Main Authors:	Hasbullah, Nurul Fadzlin, David, J. P. R., Mowbray, D. J.
Format:	Proceeding Paper
Language:	English
Published:	2010
Subjects:	TK7885 Computer engineering
Online Access:	http://irep.iium.edu.my/1477/ http://irep.iium.edu.my/1477/1/PERFIKNFH-revised.pdf

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