p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

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p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

Amodification of the thickness of the low-growth- emperature component of the GaAs spacer layers in multilayer 1.3 um InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15...

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Bibliographic Details
Main Authors:	Liu, H. Y., Liew, S. L., Badcock, T., Mowbray, D. J., Skolnick, M. S., Ray, S. K., Choi, T. L., Groom, K. M., Stevens, B., Hasbullah, Nurul Fadzlin, Jin, C. Y., Hopkinson, M., Hogg, R. A.
Format:	Article
Language:	English
Published:	American Institute of Physics 2006
Subjects:	QC Physics TA1501 Applied optics. Lasers
Online Access:	http://irep.iium.edu.my/1306/ http://irep.iium.edu.my/1306/1/p-doped__1.3um_InAs-GaAs_QD_laser-Liu_2006.pdf

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