Vacancies in GaN bulk and nanowires: effect of self-interaction corrections

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Vacancies in GaN bulk and nanowires: effect of self-interaction corrections

We investigate gallium and nitrogen vacancies in gallium nitride (GaN) bulk and nanowires using self-interaction corrected pseudopotentials (SIC). In particular, we examine the band structures to compare and contrast differences between the SIC results and standard density functional theory (DFT) re...

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Bibliographic Details
Main Authors:	Carter, Damien, Fuchs, M., Stampfl, C.
Format:	Journal Article
Published:	Institute of Physics Publishing Ltd. 2012
Online Access:	http://hdl.handle.net/20.500.11937/9627

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