Terminal Deuterium Atoms Protect Silicon from Oxidation
In recent years, the hybrid silicon-molecular electronics technology has been gaining significant attention for applications in sensors, photovoltaics, power generation, and molecular electronics devices. However, Si-H surfaces, which are the platforms on which these devices are formed, are prone to...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | http://purl.org/au-research/grants/arc/DP190100735 http://hdl.handle.net/20.500.11937/93933 |
| _version_ | 1848765814607446016 |
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| author | Li, Tiexin Peiris, Chandramalika Aragonès, A.C. Hurtado, Carlos Kicic, Anthony Ciampi, Simone MacGregor, M. Darwish, T. Darwish, Nadim |
| author_facet | Li, Tiexin Peiris, Chandramalika Aragonès, A.C. Hurtado, Carlos Kicic, Anthony Ciampi, Simone MacGregor, M. Darwish, T. Darwish, Nadim |
| author_sort | Li, Tiexin |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | In recent years, the hybrid silicon-molecular electronics technology has been gaining significant attention for applications in sensors, photovoltaics, power generation, and molecular electronics devices. However, Si-H surfaces, which are the platforms on which these devices are formed, are prone to oxidation, compromising the mechanical and electronic stability of the devices. Here, we show that when hydrogen is replaced by deuterium, the Si-D surface becomes significantly more resistant to oxidation when either positive or negative voltages are applied to the Si surface. Si-D surfaces are more resistant to oxidation, and their current-voltage characteristics are more stable than those measured on Si-H surfaces. At positive voltages, the Si-D stability appears to be related to the flat band potential of Si-D being more positive compared to Si-H surfaces, making Si-D surfaces less attractive to oxidizing OH- ions. The limited oxidation of Si-D surfaces at negative potentials is interpreted by the frequencies of the Si-D bending modes being coupled to that of the bulk Si surface phonon modes, which would make the duration of the Si-D excited vibrational state significantly less than that of Si-H. The strong surface isotope effect has implications in the design of silicon-based sensing, molecular electronics, and power-generation devices and the interpretation of charge transfer across them. |
| first_indexed | 2025-11-14T11:41:14Z |
| format | Journal Article |
| id | curtin-20.500.11937-93933 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| language | eng |
| last_indexed | 2025-11-14T11:41:14Z |
| publishDate | 2023 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-939332024-11-12T02:39:56Z Terminal Deuterium Atoms Protect Silicon from Oxidation Li, Tiexin Peiris, Chandramalika Aragonès, A.C. Hurtado, Carlos Kicic, Anthony Ciampi, Simone MacGregor, M. Darwish, T. Darwish, Nadim deuterium flat band potential silicon oxidation surface isotope effect In recent years, the hybrid silicon-molecular electronics technology has been gaining significant attention for applications in sensors, photovoltaics, power generation, and molecular electronics devices. However, Si-H surfaces, which are the platforms on which these devices are formed, are prone to oxidation, compromising the mechanical and electronic stability of the devices. Here, we show that when hydrogen is replaced by deuterium, the Si-D surface becomes significantly more resistant to oxidation when either positive or negative voltages are applied to the Si surface. Si-D surfaces are more resistant to oxidation, and their current-voltage characteristics are more stable than those measured on Si-H surfaces. At positive voltages, the Si-D stability appears to be related to the flat band potential of Si-D being more positive compared to Si-H surfaces, making Si-D surfaces less attractive to oxidizing OH- ions. The limited oxidation of Si-D surfaces at negative potentials is interpreted by the frequencies of the Si-D bending modes being coupled to that of the bulk Si surface phonon modes, which would make the duration of the Si-D excited vibrational state significantly less than that of Si-H. The strong surface isotope effect has implications in the design of silicon-based sensing, molecular electronics, and power-generation devices and the interpretation of charge transfer across them. 2023 Journal Article http://hdl.handle.net/20.500.11937/93933 10.1021/acsami.3c11598 eng http://purl.org/au-research/grants/arc/DP190100735 http://purl.org/au-research/grants/arc/DP220100553 http://purl.org/au-research/grants/arc/FT200100301 fulltext |
| spellingShingle | deuterium flat band potential silicon oxidation surface isotope effect Li, Tiexin Peiris, Chandramalika Aragonès, A.C. Hurtado, Carlos Kicic, Anthony Ciampi, Simone MacGregor, M. Darwish, T. Darwish, Nadim Terminal Deuterium Atoms Protect Silicon from Oxidation |
| title | Terminal Deuterium Atoms Protect Silicon from Oxidation |
| title_full | Terminal Deuterium Atoms Protect Silicon from Oxidation |
| title_fullStr | Terminal Deuterium Atoms Protect Silicon from Oxidation |
| title_full_unstemmed | Terminal Deuterium Atoms Protect Silicon from Oxidation |
| title_short | Terminal Deuterium Atoms Protect Silicon from Oxidation |
| title_sort | terminal deuterium atoms protect silicon from oxidation |
| topic | deuterium flat band potential silicon oxidation surface isotope effect |
| url | http://purl.org/au-research/grants/arc/DP190100735 http://purl.org/au-research/grants/arc/DP190100735 http://purl.org/au-research/grants/arc/DP190100735 http://hdl.handle.net/20.500.11937/93933 |