Effect of Electric Fields on Silicon-Based Monolayers
Electric fields can induce bond breaking and bond forming, catalyze chemical reactions on surfaces, and change the structure of self-assembled monolayers on electrode surfaces. Here, we study the effect of electric fields supplied either by an electrochemical potential or by conducting atomic force...
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| Format: | Journal Article |
| Language: | English |
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AMER CHEMICAL SOC
2022
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| Subjects: | |
| Online Access: | http://purl.org/au-research/grants/arc/DP190100735 http://hdl.handle.net/20.500.11937/93928 |
| _version_ | 1848765813139439616 |
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| author | Li, Tiexin Peiris, Chandramalika Dief, Essam MacGregor, M. Ciampi, Simone Darwish, Nadim |
| author_facet | Li, Tiexin Peiris, Chandramalika Dief, Essam MacGregor, M. Ciampi, Simone Darwish, Nadim |
| author_sort | Li, Tiexin |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Electric fields can induce bond breaking and bond forming, catalyze chemical reactions on surfaces, and change the structure of self-assembled monolayers on electrode surfaces. Here, we study the effect of electric fields supplied either by an electrochemical potential or by conducting atomic force microscopy (C-AFM) on Si-based monolayers. We report that typical monolayers on silicon undergo partial desorption followed by the oxidation of the underneath silicon at +1.5 V vs Ag/AgCl. The monolayer loses 28% of its surface coverage and 55% of its electron transfer rate constant (ket) when +1.5 V electrochemical potential is applied on the Si surface for 10 min. Similarly, a bias voltage of +5 V applied by C-AFM induces complete desorption of the monolayer at specific sites accompanied by an average oxide growth of 2.6 nm when the duration of the bias applied is 8 min. Current-voltage plots progressively change from rectifying, typical of metal-semiconductor junctions, to insulating as the oxide grows. These results define the stability of Si-based organic monolayers toward electric fields and have implication in the design of silicon-based monolayers, molecular electronics devices, and on the interpretation of charge-transfer kinetics across them. |
| first_indexed | 2025-11-14T11:41:12Z |
| format | Journal Article |
| id | curtin-20.500.11937-93928 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T11:41:12Z |
| publishDate | 2022 |
| publisher | AMER CHEMICAL SOC |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-939282024-01-18T06:19:55Z Effect of Electric Fields on Silicon-Based Monolayers Li, Tiexin Peiris, Chandramalika Dief, Essam MacGregor, M. Ciampi, Simone Darwish, Nadim Science & Technology Physical Sciences Technology Chemistry, Multidisciplinary Chemistry, Physical Materials Science, Multidisciplinary Chemistry Materials Science SELF-ASSEMBLED MONOLAYERS ORGANIC MONOLAYERS TERMINATED MONOLAYERS SI SURFACES SI(100) FUNCTIONALIZATION ATTACHMENT CHEMISTRY INSIGHTS Electric fields can induce bond breaking and bond forming, catalyze chemical reactions on surfaces, and change the structure of self-assembled monolayers on electrode surfaces. Here, we study the effect of electric fields supplied either by an electrochemical potential or by conducting atomic force microscopy (C-AFM) on Si-based monolayers. We report that typical monolayers on silicon undergo partial desorption followed by the oxidation of the underneath silicon at +1.5 V vs Ag/AgCl. The monolayer loses 28% of its surface coverage and 55% of its electron transfer rate constant (ket) when +1.5 V electrochemical potential is applied on the Si surface for 10 min. Similarly, a bias voltage of +5 V applied by C-AFM induces complete desorption of the monolayer at specific sites accompanied by an average oxide growth of 2.6 nm when the duration of the bias applied is 8 min. Current-voltage plots progressively change from rectifying, typical of metal-semiconductor junctions, to insulating as the oxide grows. These results define the stability of Si-based organic monolayers toward electric fields and have implication in the design of silicon-based monolayers, molecular electronics devices, and on the interpretation of charge-transfer kinetics across them. 2022 Journal Article http://hdl.handle.net/20.500.11937/93928 10.1021/acs.langmuir.2c00015 English http://purl.org/au-research/grants/arc/DP190100735 AMER CHEMICAL SOC fulltext |
| spellingShingle | Science & Technology Physical Sciences Technology Chemistry, Multidisciplinary Chemistry, Physical Materials Science, Multidisciplinary Chemistry Materials Science SELF-ASSEMBLED MONOLAYERS ORGANIC MONOLAYERS TERMINATED MONOLAYERS SI SURFACES SI(100) FUNCTIONALIZATION ATTACHMENT CHEMISTRY INSIGHTS Li, Tiexin Peiris, Chandramalika Dief, Essam MacGregor, M. Ciampi, Simone Darwish, Nadim Effect of Electric Fields on Silicon-Based Monolayers |
| title | Effect of Electric Fields on Silicon-Based Monolayers |
| title_full | Effect of Electric Fields on Silicon-Based Monolayers |
| title_fullStr | Effect of Electric Fields on Silicon-Based Monolayers |
| title_full_unstemmed | Effect of Electric Fields on Silicon-Based Monolayers |
| title_short | Effect of Electric Fields on Silicon-Based Monolayers |
| title_sort | effect of electric fields on silicon-based monolayers |
| topic | Science & Technology Physical Sciences Technology Chemistry, Multidisciplinary Chemistry, Physical Materials Science, Multidisciplinary Chemistry Materials Science SELF-ASSEMBLED MONOLAYERS ORGANIC MONOLAYERS TERMINATED MONOLAYERS SI SURFACES SI(100) FUNCTIONALIZATION ATTACHMENT CHEMISTRY INSIGHTS |
| url | http://purl.org/au-research/grants/arc/DP190100735 http://hdl.handle.net/20.500.11937/93928 |