Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites
The electrochemical reduction of bulk silica, due to its high electrical resistance, is of limited viability, namely, requiring temperatures in excess of 850 °C. By means of electrochemical and electrical measurements in atomic force microscopy, we demonstrate that at a buried interface, where silic...
| Main Authors: | , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
AMER CHEMICAL SOC
2021
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| Subjects: | |
| Online Access: | http://purl.org/au-research/grants/arc/DP190100735 http://hdl.handle.net/20.500.11937/91723 |
| _version_ | 1848765579061624832 |
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| author | Zhang, S. Ferrie, S. Peiris, C.R. Lyu, X. Vogel, Y.B. Darwish, Nadim Ciampi, Simone |
| author_facet | Zhang, S. Ferrie, S. Peiris, C.R. Lyu, X. Vogel, Y.B. Darwish, Nadim Ciampi, Simone |
| author_sort | Zhang, S. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | The electrochemical reduction of bulk silica, due to its high electrical resistance, is of limited viability, namely, requiring temperatures in excess of 850 °C. By means of electrochemical and electrical measurements in atomic force microscopy, we demonstrate that at a buried interface, where silica has grown on highly conductive Si(110) crystal facets, the silica-silicon conversion becomes reversible at room temperature and accessible within a narrow potential window. We conclude that parasitic signals commonly observed in voltammograms of silicon electrodes originate from silica-silicon redox chemistry. While these findings do not remove the requirement of high temperature toward bulk silica electrochemical reduction, they redefine for silicon the potential window free from parasitic signals and, as such, significantly restrict the conditions where electroanalytical methods can be applied to the study of silicon surface reactivity. |
| first_indexed | 2025-11-14T11:37:29Z |
| format | Journal Article |
| id | curtin-20.500.11937-91723 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T11:37:29Z |
| publishDate | 2021 |
| publisher | AMER CHEMICAL SOC |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-917232023-05-30T08:41:12Z Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites Zhang, S. Ferrie, S. Peiris, C.R. Lyu, X. Vogel, Y.B. Darwish, Nadim Ciampi, Simone Science & Technology Physical Sciences Chemistry, Multidisciplinary Chemistry The electrochemical reduction of bulk silica, due to its high electrical resistance, is of limited viability, namely, requiring temperatures in excess of 850 °C. By means of electrochemical and electrical measurements in atomic force microscopy, we demonstrate that at a buried interface, where silica has grown on highly conductive Si(110) crystal facets, the silica-silicon conversion becomes reversible at room temperature and accessible within a narrow potential window. We conclude that parasitic signals commonly observed in voltammograms of silicon electrodes originate from silica-silicon redox chemistry. While these findings do not remove the requirement of high temperature toward bulk silica electrochemical reduction, they redefine for silicon the potential window free from parasitic signals and, as such, significantly restrict the conditions where electroanalytical methods can be applied to the study of silicon surface reactivity. 2021 Journal Article http://hdl.handle.net/20.500.11937/91723 10.1021/jacs.0c10713 English http://purl.org/au-research/grants/arc/DP190100735 http://purl.org/au-research/grants/arc/FT190100148 AMER CHEMICAL SOC fulltext |
| spellingShingle | Science & Technology Physical Sciences Chemistry, Multidisciplinary Chemistry Zhang, S. Ferrie, S. Peiris, C.R. Lyu, X. Vogel, Y.B. Darwish, Nadim Ciampi, Simone Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites |
| title | Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites |
| title_full | Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites |
| title_fullStr | Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites |
| title_full_unstemmed | Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites |
| title_short | Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites |
| title_sort | common background signals in voltammograms of crystalline silicon electrodes are reversible silica-silicon redox chemistry at highly conductive surface sites |
| topic | Science & Technology Physical Sciences Chemistry, Multidisciplinary Chemistry |
| url | http://purl.org/au-research/grants/arc/DP190100735 http://purl.org/au-research/grants/arc/DP190100735 http://hdl.handle.net/20.500.11937/91723 |