Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites

The electrochemical reduction of bulk silica, due to its high electrical resistance, is of limited viability, namely, requiring temperatures in excess of 850 °C. By means of electrochemical and electrical measurements in atomic force microscopy, we demonstrate that at a buried interface, where silic...

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Main Authors: Zhang, S., Ferrie, S., Peiris, C.R., Lyu, X., Vogel, Y.B., Darwish, Nadim, Ciampi, Simone
Format: Journal Article
Language:English
Published: AMER CHEMICAL SOC 2021
Subjects:
Online Access:http://purl.org/au-research/grants/arc/DP190100735
http://hdl.handle.net/20.500.11937/91723
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author Zhang, S.
Ferrie, S.
Peiris, C.R.
Lyu, X.
Vogel, Y.B.
Darwish, Nadim
Ciampi, Simone
author_facet Zhang, S.
Ferrie, S.
Peiris, C.R.
Lyu, X.
Vogel, Y.B.
Darwish, Nadim
Ciampi, Simone
author_sort Zhang, S.
building Curtin Institutional Repository
collection Online Access
description The electrochemical reduction of bulk silica, due to its high electrical resistance, is of limited viability, namely, requiring temperatures in excess of 850 °C. By means of electrochemical and electrical measurements in atomic force microscopy, we demonstrate that at a buried interface, where silica has grown on highly conductive Si(110) crystal facets, the silica-silicon conversion becomes reversible at room temperature and accessible within a narrow potential window. We conclude that parasitic signals commonly observed in voltammograms of silicon electrodes originate from silica-silicon redox chemistry. While these findings do not remove the requirement of high temperature toward bulk silica electrochemical reduction, they redefine for silicon the potential window free from parasitic signals and, as such, significantly restrict the conditions where electroanalytical methods can be applied to the study of silicon surface reactivity.
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institution Curtin University Malaysia
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language English
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publishDate 2021
publisher AMER CHEMICAL SOC
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spelling curtin-20.500.11937-917232023-05-30T08:41:12Z Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites Zhang, S. Ferrie, S. Peiris, C.R. Lyu, X. Vogel, Y.B. Darwish, Nadim Ciampi, Simone Science & Technology Physical Sciences Chemistry, Multidisciplinary Chemistry The electrochemical reduction of bulk silica, due to its high electrical resistance, is of limited viability, namely, requiring temperatures in excess of 850 °C. By means of electrochemical and electrical measurements in atomic force microscopy, we demonstrate that at a buried interface, where silica has grown on highly conductive Si(110) crystal facets, the silica-silicon conversion becomes reversible at room temperature and accessible within a narrow potential window. We conclude that parasitic signals commonly observed in voltammograms of silicon electrodes originate from silica-silicon redox chemistry. While these findings do not remove the requirement of high temperature toward bulk silica electrochemical reduction, they redefine for silicon the potential window free from parasitic signals and, as such, significantly restrict the conditions where electroanalytical methods can be applied to the study of silicon surface reactivity. 2021 Journal Article http://hdl.handle.net/20.500.11937/91723 10.1021/jacs.0c10713 English http://purl.org/au-research/grants/arc/DP190100735 http://purl.org/au-research/grants/arc/FT190100148 AMER CHEMICAL SOC fulltext
spellingShingle Science & Technology
Physical Sciences
Chemistry, Multidisciplinary
Chemistry
Zhang, S.
Ferrie, S.
Peiris, C.R.
Lyu, X.
Vogel, Y.B.
Darwish, Nadim
Ciampi, Simone
Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites
title Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites
title_full Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites
title_fullStr Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites
title_full_unstemmed Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites
title_short Common Background Signals in Voltammograms of Crystalline Silicon Electrodes are Reversible Silica-Silicon Redox Chemistry at Highly Conductive Surface Sites
title_sort common background signals in voltammograms of crystalline silicon electrodes are reversible silica-silicon redox chemistry at highly conductive surface sites
topic Science & Technology
Physical Sciences
Chemistry, Multidisciplinary
Chemistry
url http://purl.org/au-research/grants/arc/DP190100735
http://purl.org/au-research/grants/arc/DP190100735
http://hdl.handle.net/20.500.11937/91723