Temperature-dependent bending strength in piezoelectric semiconductive ceramics
By using theoretical analysis and three-point bending experiments, influence of temperature on the bending strength of GaN ceramics is investigated. Based on the critical fracture energy density, a simple and effective temperature-dependent bending strength prediction model is established for piezoe...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
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Elsevier
2021
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| Online Access: | http://hdl.handle.net/20.500.11937/86761 |
| _version_ | 1848764869511217152 |
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| author | Zhao, M.H. Wang, Y. Guo, C.K. Lu, Chunsheng Xu, G.T. Qin, G.S. |
| author_facet | Zhao, M.H. Wang, Y. Guo, C.K. Lu, Chunsheng Xu, G.T. Qin, G.S. |
| author_sort | Zhao, M.H. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | By using theoretical analysis and three-point bending experiments, influence of temperature on the bending strength of GaN ceramics is investigated. Based on the critical fracture energy density, a simple and effective temperature-dependent bending strength prediction model is established for piezoelectric semiconductive ceramics. In the model, the bending strength at high temperature depends on the reference temperature, stiffness, polarization and melting point, as well as piezoelectric polarization charges. It is shown that the theoretical predictions are consistent with experimental results. Thus, such a model is instructive to the reliability design of GaN high-temperature devices. |
| first_indexed | 2025-11-14T11:26:13Z |
| format | Journal Article |
| id | curtin-20.500.11937-86761 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T11:26:13Z |
| publishDate | 2021 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-867612022-01-06T00:16:42Z Temperature-dependent bending strength in piezoelectric semiconductive ceramics Zhao, M.H. Wang, Y. Guo, C.K. Lu, Chunsheng Xu, G.T. Qin, G.S. By using theoretical analysis and three-point bending experiments, influence of temperature on the bending strength of GaN ceramics is investigated. Based on the critical fracture energy density, a simple and effective temperature-dependent bending strength prediction model is established for piezoelectric semiconductive ceramics. In the model, the bending strength at high temperature depends on the reference temperature, stiffness, polarization and melting point, as well as piezoelectric polarization charges. It is shown that the theoretical predictions are consistent with experimental results. Thus, such a model is instructive to the reliability design of GaN high-temperature devices. 2021 Journal Article http://hdl.handle.net/20.500.11937/86761 10.1016/j.ceramint.2021.10.064 Elsevier restricted |
| spellingShingle | Zhao, M.H. Wang, Y. Guo, C.K. Lu, Chunsheng Xu, G.T. Qin, G.S. Temperature-dependent bending strength in piezoelectric semiconductive ceramics |
| title | Temperature-dependent bending strength in piezoelectric semiconductive ceramics |
| title_full | Temperature-dependent bending strength in piezoelectric semiconductive ceramics |
| title_fullStr | Temperature-dependent bending strength in piezoelectric semiconductive ceramics |
| title_full_unstemmed | Temperature-dependent bending strength in piezoelectric semiconductive ceramics |
| title_short | Temperature-dependent bending strength in piezoelectric semiconductive ceramics |
| title_sort | temperature-dependent bending strength in piezoelectric semiconductive ceramics |
| url | http://hdl.handle.net/20.500.11937/86761 |