Mobility of the {0110} inversion domain boundary in ZnO nanopillars

The apparent activation energy of a nanostructure is difficult to directly measure experimentally. In this letter, we present a computational method for estimating the apparent activation energy of a range of semiconductor nanostructures. This method allows the activation energy to be obtained from...

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Main Authors: Wang, J., Zhou, M., Yang, R., Xiao, P., Ke, F., Lu, Chunsheng
Format: Journal Article
Published: 2021
Online Access:http://hdl.handle.net/20.500.11937/86231
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author Wang, J.
Zhou, M.
Yang, R.
Xiao, P.
Ke, F.
Lu, Chunsheng
author_facet Wang, J.
Zhou, M.
Yang, R.
Xiao, P.
Ke, F.
Lu, Chunsheng
author_sort Wang, J.
building Curtin Institutional Repository
collection Online Access
description The apparent activation energy of a nanostructure is difficult to directly measure experimentally. In this letter, we present a computational method for estimating the apparent activation energy of a range of semiconductor nanostructures. This method allows the activation energy to be obtained from experimentally measured average activation time or propagation speed at various temperatures of the phase boundary associated with the transformation. The approach entails analyzing the mobility of the transformation in question using a model based on the Arrhenius relation. The specific analysis carried out uses the {0110} inversion domain boundary in wurtzite ZnO nanopillars as example. Molecular dynamics simulations are conducted over the temperature range of 300–900 K of the corresponding available experimental data. The approach and analysis offer a means for experimentally establishing the apparent activation energy of the {0110} inversion domain boundary in a variety of wurtzite-structured II-VI, III-V and IV-IV binary compounds.
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institution Curtin University Malaysia
institution_category Local University
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publishDate 2021
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spelling curtin-20.500.11937-862312021-11-19T05:39:53Z Mobility of the {0110} inversion domain boundary in ZnO nanopillars Wang, J. Zhou, M. Yang, R. Xiao, P. Ke, F. Lu, Chunsheng The apparent activation energy of a nanostructure is difficult to directly measure experimentally. In this letter, we present a computational method for estimating the apparent activation energy of a range of semiconductor nanostructures. This method allows the activation energy to be obtained from experimentally measured average activation time or propagation speed at various temperatures of the phase boundary associated with the transformation. The approach entails analyzing the mobility of the transformation in question using a model based on the Arrhenius relation. The specific analysis carried out uses the {0110} inversion domain boundary in wurtzite ZnO nanopillars as example. Molecular dynamics simulations are conducted over the temperature range of 300–900 K of the corresponding available experimental data. The approach and analysis offer a means for experimentally establishing the apparent activation energy of the {0110} inversion domain boundary in a variety of wurtzite-structured II-VI, III-V and IV-IV binary compounds. 2021 Journal Article http://hdl.handle.net/20.500.11937/86231 10.1016/j.matlet.2021.130778 restricted
spellingShingle Wang, J.
Zhou, M.
Yang, R.
Xiao, P.
Ke, F.
Lu, Chunsheng
Mobility of the {0110} inversion domain boundary in ZnO nanopillars
title Mobility of the {0110} inversion domain boundary in ZnO nanopillars
title_full Mobility of the {0110} inversion domain boundary in ZnO nanopillars
title_fullStr Mobility of the {0110} inversion domain boundary in ZnO nanopillars
title_full_unstemmed Mobility of the {0110} inversion domain boundary in ZnO nanopillars
title_short Mobility of the {0110} inversion domain boundary in ZnO nanopillars
title_sort mobility of the {0110} inversion domain boundary in zno nanopillars
url http://hdl.handle.net/20.500.11937/86231