Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires
In this paper, the governing equation of a piezoelectric semiconductor (PSC) is derived after a consideration of flexoelectricity and the strain gradient effect. A one-dimensional first-order beam model is obtained through integration across its section. Based on this model, theoretical analysis is...
| Main Authors: | , , , , |
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| Format: | Journal Article |
| Language: | English |
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AMER INST PHYSICS
2021
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| Subjects: | |
| Online Access: | http://hdl.handle.net/20.500.11937/85004 |
| _version_ | 1848764709127323648 |
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| author | Zhao, M. Niu, J. Lu, Chunsheng Wang, B. Fan, C. |
| author_facet | Zhao, M. Niu, J. Lu, Chunsheng Wang, B. Fan, C. |
| author_sort | Zhao, M. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | In this paper, the governing equation of a piezoelectric semiconductor (PSC) is derived after a consideration of flexoelectricity and the strain gradient effect. A one-dimensional first-order beam model is obtained through integration across its section. Based on this model, theoretical analysis is carried out for a cantilever PSC nanowire subjected to a time-harmonic transverse shear force. The effects of flexoelectricity and the strain gradient on bending vibration characteristics are investigated, including the natural frequencies and distributions of physical quantities. The results show that the strain gradient effect on the natural frequency and stiffness of a PSC nanowire is greater than that of flexoelectricity, while with regard to the influence on electric potential and carrier concentration, the reverse is true. Our findings shed light on the design and optimization of PSC devices such as energy harvesters at the nanoscale. |
| first_indexed | 2025-11-14T11:23:40Z |
| format | Journal Article |
| id | curtin-20.500.11937-85004 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T11:23:40Z |
| publishDate | 2021 |
| publisher | AMER INST PHYSICS |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-850042022-05-05T01:50:10Z Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires Zhao, M. Niu, J. Lu, Chunsheng Wang, B. Fan, C. Science & Technology Physical Sciences Physics, Applied Physics In this paper, the governing equation of a piezoelectric semiconductor (PSC) is derived after a consideration of flexoelectricity and the strain gradient effect. A one-dimensional first-order beam model is obtained through integration across its section. Based on this model, theoretical analysis is carried out for a cantilever PSC nanowire subjected to a time-harmonic transverse shear force. The effects of flexoelectricity and the strain gradient on bending vibration characteristics are investigated, including the natural frequencies and distributions of physical quantities. The results show that the strain gradient effect on the natural frequency and stiffness of a PSC nanowire is greater than that of flexoelectricity, while with regard to the influence on electric potential and carrier concentration, the reverse is true. Our findings shed light on the design and optimization of PSC devices such as energy harvesters at the nanoscale. 2021 Journal Article http://hdl.handle.net/20.500.11937/85004 10.1063/5.0038782 English AMER INST PHYSICS fulltext |
| spellingShingle | Science & Technology Physical Sciences Physics, Applied Physics Zhao, M. Niu, J. Lu, Chunsheng Wang, B. Fan, C. Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires |
| title | Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires |
| title_full | Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires |
| title_fullStr | Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires |
| title_full_unstemmed | Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires |
| title_short | Effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires |
| title_sort | effects of flexoelectricity and strain gradient on bending vibration characteristics of piezoelectric semiconductor nanowires |
| topic | Science & Technology Physical Sciences Physics, Applied Physics |
| url | http://hdl.handle.net/20.500.11937/85004 |