Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm

Discrete-mode quantum-cascade lasers have been developed in the InGaAsAlAsSbInP materials system. For an uncoated 10-µm-wide ridge waveguide and 3000-µm-long cavity, the laser had a threshold current density J th of 4.2 kA·cm2 {Ith}=1.5 A)at 300 K with a slope efficiency of 80 mW/A. A stable single-...

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Main Authors: Phelan, R., Slight, T., Kelly, B., O'Carroll, J., McKee, A., Revin, D., Zhang, S., Krysa, A., Kennedy, K., Cockburn, J., Ironside, Charlie, Meredith, W., O'Gorman, J.
Format: Journal Article
Published: 2010
Online Access:http://hdl.handle.net/20.500.11937/8324
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author Phelan, R.
Slight, T.
Kelly, B.
O'Carroll, J.
McKee, A.
Revin, D.
Zhang, S.
Krysa, A.
Kennedy, K.
Cockburn, J.
Ironside, Charlie
Meredith, W.
O'Gorman, J.
author_facet Phelan, R.
Slight, T.
Kelly, B.
O'Carroll, J.
McKee, A.
Revin, D.
Zhang, S.
Krysa, A.
Kennedy, K.
Cockburn, J.
Ironside, Charlie
Meredith, W.
O'Gorman, J.
author_sort Phelan, R.
building Curtin Institutional Repository
collection Online Access
description Discrete-mode quantum-cascade lasers have been developed in the InGaAsAlAsSbInP materials system. For an uncoated 10-µm-wide ridge waveguide and 3000-µm-long cavity, the laser had a threshold current density J th of 4.2 kA·cm2 {Ith}=1.5 A)at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 µm with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of 253 K < T <303 K. © 2006 IEEE.
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institution Curtin University Malaysia
institution_category Local University
last_indexed 2025-11-14T06:20:19Z
publishDate 2010
recordtype eprints
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spelling curtin-20.500.11937-83242017-09-13T14:35:06Z Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm Phelan, R. Slight, T. Kelly, B. O'Carroll, J. McKee, A. Revin, D. Zhang, S. Krysa, A. Kennedy, K. Cockburn, J. Ironside, Charlie Meredith, W. O'Gorman, J. Discrete-mode quantum-cascade lasers have been developed in the InGaAsAlAsSbInP materials system. For an uncoated 10-µm-wide ridge waveguide and 3000-µm-long cavity, the laser had a threshold current density J th of 4.2 kA·cm2 {Ith}=1.5 A)at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 µm with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of 253 K < T <303 K. © 2006 IEEE. 2010 Journal Article http://hdl.handle.net/20.500.11937/8324 10.1109/LPT.2010.2053529 restricted
spellingShingle Phelan, R.
Slight, T.
Kelly, B.
O'Carroll, J.
McKee, A.
Revin, D.
Zhang, S.
Krysa, A.
Kennedy, K.
Cockburn, J.
Ironside, Charlie
Meredith, W.
O'Gorman, J.
Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm
title Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm
title_full Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm
title_fullStr Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm
title_full_unstemmed Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm
title_short Room-temperature operation of discrete-mode InGaAs-AlAsSb quantum-cascade laser with emission at ?=3.3 µm
title_sort room-temperature operation of discrete-mode ingaas-alassb quantum-cascade laser with emission at ?=3.3 µm
url http://hdl.handle.net/20.500.11937/8324