Geometry and diameter dependence of the electronic and physical properties of GaN nanowires from first principles

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Geometry and diameter dependence of the electronic and physical properties of GaN nanowires from first principles

We present a comprehensive first-principles investigation of the atomic and electronic structures of gallium nitride nanowires, and examine the dependence on nanowire diameter and shape. We consider nanowires in the 0001 growth direction, with diameters ranging from 8 to 35 and investigate the infl...

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Bibliographic Details
Main Authors:	Carter, Damien, Gale, Julian, Delley, B., Stampfl, C.
Format:	Journal Article
Published:	American Physical Society 2008
Online Access:	http://prb.aps.org http://hdl.handle.net/20.500.11937/8219

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