Passivation of interstitial and vacancy mediated trap-states for efficient and stable triple-cation perovskite solar cells
The current work reports the concurrent passivation of interstitial and oxygen vacancy mediated defect states in low temperature processed ZnO electron transport layer (ETL) via Ultraviolet-Ozone (UVO) treatment for fabricating highly efficient (maximum efficiency: 16.70%), triple cation based MA0.5...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
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Elsevier SA
2018
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| Online Access: | http://hdl.handle.net/20.500.11937/74293 |
| _version_ | 1848763233836466176 |
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| author | Mahmud, M. Elumalai, Naveen Kumar Upama, M. Wang, D. Gonçales, V. Wright, M. Xu, C. Haque, F. Uddin, A. |
| author_facet | Mahmud, M. Elumalai, Naveen Kumar Upama, M. Wang, D. Gonçales, V. Wright, M. Xu, C. Haque, F. Uddin, A. |
| author_sort | Mahmud, M. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | The current work reports the concurrent passivation of interstitial and oxygen vacancy mediated defect states in low temperature processed ZnO electron transport layer (ETL) via Ultraviolet-Ozone (UVO) treatment for fabricating highly efficient (maximum efficiency: 16.70%), triple cation based MA0.57FA0.38Rb0.05PbI3 (MA: methyl ammonium, FA: formamidinium, Rb: rubidium) perovskite solar cell (PSC). Under UV exposure, ozone decomposes to free atomic oxygen and intercalates into the interstitial and oxygen vacancy induced defect sites in the ZnO lattice matrix, which contributes to suppressed trap-assisted recombination phenomena in perovskite device. UVO treatment also reduces the content of functional hydroxyl group on ZnO surface, that increases the inter-particle connectivity and grain size of perovskite film on UVO treated ZnO ETL. Owing to this, the perovskite film atop UVO treated ZnO film exhibits reduced micro-strain and dislocation density values, which contribute to the enhanced photovoltaic performance of PSC with modified ZnO ETL. The modified PSCs exhibit higher recombination resistance (RRec) ∼40% compared to pristine ZnO ETL based control devices. Adding to the merit, the UVO treated ZnO PSC also demonstrates superior device stability, retaining about 88% of its initial PCE in the course of a month-long, systematic degradation study. |
| first_indexed | 2025-11-14T11:00:13Z |
| format | Journal Article |
| id | curtin-20.500.11937-74293 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T11:00:13Z |
| publishDate | 2018 |
| publisher | Elsevier SA |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-742932019-06-26T07:50:28Z Passivation of interstitial and vacancy mediated trap-states for efficient and stable triple-cation perovskite solar cells Mahmud, M. Elumalai, Naveen Kumar Upama, M. Wang, D. Gonçales, V. Wright, M. Xu, C. Haque, F. Uddin, A. The current work reports the concurrent passivation of interstitial and oxygen vacancy mediated defect states in low temperature processed ZnO electron transport layer (ETL) via Ultraviolet-Ozone (UVO) treatment for fabricating highly efficient (maximum efficiency: 16.70%), triple cation based MA0.57FA0.38Rb0.05PbI3 (MA: methyl ammonium, FA: formamidinium, Rb: rubidium) perovskite solar cell (PSC). Under UV exposure, ozone decomposes to free atomic oxygen and intercalates into the interstitial and oxygen vacancy induced defect sites in the ZnO lattice matrix, which contributes to suppressed trap-assisted recombination phenomena in perovskite device. UVO treatment also reduces the content of functional hydroxyl group on ZnO surface, that increases the inter-particle connectivity and grain size of perovskite film on UVO treated ZnO ETL. Owing to this, the perovskite film atop UVO treated ZnO film exhibits reduced micro-strain and dislocation density values, which contribute to the enhanced photovoltaic performance of PSC with modified ZnO ETL. The modified PSCs exhibit higher recombination resistance (RRec) ∼40% compared to pristine ZnO ETL based control devices. Adding to the merit, the UVO treated ZnO PSC also demonstrates superior device stability, retaining about 88% of its initial PCE in the course of a month-long, systematic degradation study. 2018 Journal Article http://hdl.handle.net/20.500.11937/74293 10.1016/j.jpowsour.2018.02.030 Elsevier SA restricted |
| spellingShingle | Mahmud, M. Elumalai, Naveen Kumar Upama, M. Wang, D. Gonçales, V. Wright, M. Xu, C. Haque, F. Uddin, A. Passivation of interstitial and vacancy mediated trap-states for efficient and stable triple-cation perovskite solar cells |
| title | Passivation of interstitial and vacancy mediated trap-states for efficient and stable triple-cation perovskite solar cells |
| title_full | Passivation of interstitial and vacancy mediated trap-states for efficient and stable triple-cation perovskite solar cells |
| title_fullStr | Passivation of interstitial and vacancy mediated trap-states for efficient and stable triple-cation perovskite solar cells |
| title_full_unstemmed | Passivation of interstitial and vacancy mediated trap-states for efficient and stable triple-cation perovskite solar cells |
| title_short | Passivation of interstitial and vacancy mediated trap-states for efficient and stable triple-cation perovskite solar cells |
| title_sort | passivation of interstitial and vacancy mediated trap-states for efficient and stable triple-cation perovskite solar cells |
| url | http://hdl.handle.net/20.500.11937/74293 |