Enhanced stability of low temperature processed perovskite solar cells via augmented polaronic intensity of hole transporting layer
The commercial mass production of perovskite solar cells requires full compatibility with roll‐to‐roll processing with enhanced device stability. In line with this, the present work addresses following issues simultaneously from multiple fronts: (i) low temperature processed (140 °C) ZnO is used as...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
| Published: |
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
2016
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| Online Access: | http://hdl.handle.net/20.500.11937/73923 |
| _version_ | 1848763133464674304 |
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| author | Mahmud, M. Elumalai, Naveen Kumar Upama, M. Wang, D. Chan, K. Wright, M. Xu, C. Haque, F. Uddin, A. |
| author_facet | Mahmud, M. Elumalai, Naveen Kumar Upama, M. Wang, D. Chan, K. Wright, M. Xu, C. Haque, F. Uddin, A. |
| author_sort | Mahmud, M. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | The commercial mass production of perovskite solar cells requires full compatibility with roll‐to‐roll processing with enhanced device stability. In line with this, the present work addresses following issues simultaneously from multiple fronts: (i) low temperature processed (140 °C) ZnO is used as electron transport layer (ETL) for fabricating the mixed organic cation based perovskite solar cells, (ii) the expensive hole transporting layer (HTL) spiro‐OMeTAD is replaced with F4TCNQ doped P3HT and (iii) the fabrication method does not incorporate the dopant TBP which is known to induce degradation processes in perovskite layer. All the devices under study were fabricated in ambient conditions. The F4TCNQ doped P3HT (HTL) based devices exhibits 14 times higher device stability compared to the conventional Li‐TFSI/TBP doped P3HT devices. The underlying mechanism behind the enhanced device lifetime in F4TCNQ doped P3HT (HTL) based devices was investigated via in‐depth electronic, ionic and polaronic characterization. The enhanced polaronic property in F4TCNQ doped P3HT HTL device ascertains its superior hole extraction and electron blocking capability; and consequently higher stability retained even after a month of ageing. |
| first_indexed | 2025-11-14T10:58:37Z |
| format | Journal Article |
| id | curtin-20.500.11937-73923 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T10:58:37Z |
| publishDate | 2016 |
| publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-739232019-06-26T03:43:54Z Enhanced stability of low temperature processed perovskite solar cells via augmented polaronic intensity of hole transporting layer Mahmud, M. Elumalai, Naveen Kumar Upama, M. Wang, D. Chan, K. Wright, M. Xu, C. Haque, F. Uddin, A. The commercial mass production of perovskite solar cells requires full compatibility with roll‐to‐roll processing with enhanced device stability. In line with this, the present work addresses following issues simultaneously from multiple fronts: (i) low temperature processed (140 °C) ZnO is used as electron transport layer (ETL) for fabricating the mixed organic cation based perovskite solar cells, (ii) the expensive hole transporting layer (HTL) spiro‐OMeTAD is replaced with F4TCNQ doped P3HT and (iii) the fabrication method does not incorporate the dopant TBP which is known to induce degradation processes in perovskite layer. All the devices under study were fabricated in ambient conditions. The F4TCNQ doped P3HT (HTL) based devices exhibits 14 times higher device stability compared to the conventional Li‐TFSI/TBP doped P3HT devices. The underlying mechanism behind the enhanced device lifetime in F4TCNQ doped P3HT (HTL) based devices was investigated via in‐depth electronic, ionic and polaronic characterization. The enhanced polaronic property in F4TCNQ doped P3HT HTL device ascertains its superior hole extraction and electron blocking capability; and consequently higher stability retained even after a month of ageing. 2016 Journal Article http://hdl.handle.net/20.500.11937/73923 10.1002/pssr.201600315 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim restricted |
| spellingShingle | Mahmud, M. Elumalai, Naveen Kumar Upama, M. Wang, D. Chan, K. Wright, M. Xu, C. Haque, F. Uddin, A. Enhanced stability of low temperature processed perovskite solar cells via augmented polaronic intensity of hole transporting layer |
| title | Enhanced stability of low temperature processed perovskite solar cells via augmented polaronic intensity of hole transporting layer |
| title_full | Enhanced stability of low temperature processed perovskite solar cells via augmented polaronic intensity of hole transporting layer |
| title_fullStr | Enhanced stability of low temperature processed perovskite solar cells via augmented polaronic intensity of hole transporting layer |
| title_full_unstemmed | Enhanced stability of low temperature processed perovskite solar cells via augmented polaronic intensity of hole transporting layer |
| title_short | Enhanced stability of low temperature processed perovskite solar cells via augmented polaronic intensity of hole transporting layer |
| title_sort | enhanced stability of low temperature processed perovskite solar cells via augmented polaronic intensity of hole transporting layer |
| url | http://hdl.handle.net/20.500.11937/73923 |