Electric current dependent fracture in GaN piezoelectric semiconductor ceramics
In this paper, the fracture behavior of GaN piezoelectric semiconductor ceramics was investigated under combined mechanical and electric loading by using three-point bending tests and numerical analysis. The experimental results demonstrate that, in contrast to traditional insulating piezoelectric c...
| Main Authors: | , , , |
|---|---|
| Format: | Journal Article |
| Published: |
mdpi
2018
|
| Online Access: | http://hdl.handle.net/20.500.11937/72852 |
| _version_ | 1848762858234445824 |
|---|---|
| author | Qin, G. Lu, Chunsheng Zhang, X. Zhao, M. |
| author_facet | Qin, G. Lu, Chunsheng Zhang, X. Zhao, M. |
| author_sort | Qin, G. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | In this paper, the fracture behavior of GaN piezoelectric semiconductor ceramics was investigated under combined mechanical and electric loading by using three-point bending tests and numerical analysis. The experimental results demonstrate that, in contrast to traditional insulating piezoelectric ceramics, electric current is a key factor in affecting the fracture characteristics of GaN ceramics. The stress, electric displacement, and electric current intensity factors were numerically calculated and then a set of empirical formulae was obtained. By fitting the experimental data, a fracture criterion under combined mechanical and electrical loading was obtained in the form of an ellipsoid function of intensity factors. Such a fracture criterion can be extended to predict the failure behavior of other piezoelectric semiconductors or devices with a crack, which are useful in their reliability design and applications. |
| first_indexed | 2025-11-14T10:54:14Z |
| format | Journal Article |
| id | curtin-20.500.11937-72852 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T10:54:14Z |
| publishDate | 2018 |
| publisher | mdpi |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-728522019-01-17T01:19:17Z Electric current dependent fracture in GaN piezoelectric semiconductor ceramics Qin, G. Lu, Chunsheng Zhang, X. Zhao, M. In this paper, the fracture behavior of GaN piezoelectric semiconductor ceramics was investigated under combined mechanical and electric loading by using three-point bending tests and numerical analysis. The experimental results demonstrate that, in contrast to traditional insulating piezoelectric ceramics, electric current is a key factor in affecting the fracture characteristics of GaN ceramics. The stress, electric displacement, and electric current intensity factors were numerically calculated and then a set of empirical formulae was obtained. By fitting the experimental data, a fracture criterion under combined mechanical and electrical loading was obtained in the form of an ellipsoid function of intensity factors. Such a fracture criterion can be extended to predict the failure behavior of other piezoelectric semiconductors or devices with a crack, which are useful in their reliability design and applications. 2018 Journal Article http://hdl.handle.net/20.500.11937/72852 10.3390/ma11102000 http://creativecommons.org/licenses/by/4.0/ mdpi fulltext |
| spellingShingle | Qin, G. Lu, Chunsheng Zhang, X. Zhao, M. Electric current dependent fracture in GaN piezoelectric semiconductor ceramics |
| title | Electric current dependent fracture in GaN piezoelectric semiconductor ceramics |
| title_full | Electric current dependent fracture in GaN piezoelectric semiconductor ceramics |
| title_fullStr | Electric current dependent fracture in GaN piezoelectric semiconductor ceramics |
| title_full_unstemmed | Electric current dependent fracture in GaN piezoelectric semiconductor ceramics |
| title_short | Electric current dependent fracture in GaN piezoelectric semiconductor ceramics |
| title_sort | electric current dependent fracture in gan piezoelectric semiconductor ceramics |
| url | http://hdl.handle.net/20.500.11937/72852 |