Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet
© 2017 The Author(s). The terahertz (THz) modulator, which will be applied in next-generation wireless communication, is a key device in a THz communication system. Current THz modulators based on traditional semiconductors and metamaterials have limited modulation depth or modulation range. Therefo...
| Main Authors: | , , , , , , |
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| Format: | Journal Article |
| Published: |
Nature Publishing Group
2017
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| Online Access: | http://hdl.handle.net/20.500.11937/72260 |
| _version_ | 1848762702836531200 |
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| author | Fan, Z. Geng, Z. Lv, X. Su, Y. Yang, Y. Liu, Jian Chen, H. |
| author_facet | Fan, Z. Geng, Z. Lv, X. Su, Y. Yang, Y. Liu, Jian Chen, H. |
| author_sort | Fan, Z. |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | © 2017 The Author(s). The terahertz (THz) modulator, which will be applied in next-generation wireless communication, is a key device in a THz communication system. Current THz modulators based on traditional semiconductors and metamaterials have limited modulation depth or modulation range. Therefore, a THz modulator based on annealed tungsten disulfide (WS2, p-type) and high-resistivity silicon (n-type) is demonstrated. Pumped by a laser, the modulator presents a laser power-dependent modulation effect. Ranging from 0.25 to 2 THz, the modulation depth reaches 99% when the pumping laser is 2.59 W/cm2. The modulator works because the p-n heterojunction can separate and limit carriers to change the conductivity of the device, which results in a modulation of the THz wave. The wide band gap of WS2 can promote the separation and limitation of carriers to obtain a larger modulation depth, which provides a new direction for choosing new materials and new structures to fabricate a better THz modulator. |
| first_indexed | 2025-11-14T10:51:46Z |
| format | Journal Article |
| id | curtin-20.500.11937-72260 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T10:51:46Z |
| publishDate | 2017 |
| publisher | Nature Publishing Group |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-722602019-07-08T08:27:13Z Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet Fan, Z. Geng, Z. Lv, X. Su, Y. Yang, Y. Liu, Jian Chen, H. © 2017 The Author(s). The terahertz (THz) modulator, which will be applied in next-generation wireless communication, is a key device in a THz communication system. Current THz modulators based on traditional semiconductors and metamaterials have limited modulation depth or modulation range. Therefore, a THz modulator based on annealed tungsten disulfide (WS2, p-type) and high-resistivity silicon (n-type) is demonstrated. Pumped by a laser, the modulator presents a laser power-dependent modulation effect. Ranging from 0.25 to 2 THz, the modulation depth reaches 99% when the pumping laser is 2.59 W/cm2. The modulator works because the p-n heterojunction can separate and limit carriers to change the conductivity of the device, which results in a modulation of the THz wave. The wide band gap of WS2 can promote the separation and limitation of carriers to obtain a larger modulation depth, which provides a new direction for choosing new materials and new structures to fabricate a better THz modulator. 2017 Journal Article http://hdl.handle.net/20.500.11937/72260 10.1038/s41598-017-13864-5 http://creativecommons.org/licenses/by/4.0/ Nature Publishing Group unknown |
| spellingShingle | Fan, Z. Geng, Z. Lv, X. Su, Y. Yang, Y. Liu, Jian Chen, H. Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet |
| title | Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet |
| title_full | Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet |
| title_fullStr | Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet |
| title_full_unstemmed | Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet |
| title_short | Optical Controlled Terahertz Modulator Based on Tungsten Disulfide Nanosheet |
| title_sort | optical controlled terahertz modulator based on tungsten disulfide nanosheet |
| url | http://hdl.handle.net/20.500.11937/72260 |