Optically tuned terahertz modulator based on annealed multilayer MoS2

Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS 2 and silicon is experimentally demonstrated. The terahertz transmission could b...

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Main Authors: Cao, Y., Gan, S., Geng, Z., Liu, Jian, Yang, Y., Bao, Q., Chen, H.
Format: Journal Article
Published: Nature Publishing Group 2016
Online Access:http://hdl.handle.net/20.500.11937/71591
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author Cao, Y.
Gan, S.
Geng, Z.
Liu, Jian
Yang, Y.
Bao, Q.
Chen, H.
author_facet Cao, Y.
Gan, S.
Geng, Z.
Liu, Jian
Yang, Y.
Bao, Q.
Chen, H.
author_sort Cao, Y.
building Curtin Institutional Repository
collection Online Access
description Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS 2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS 2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS 2 -based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS 2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch.
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institution Curtin University Malaysia
institution_category Local University
last_indexed 2025-11-14T10:48:53Z
publishDate 2016
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spelling curtin-20.500.11937-715912019-01-22T07:01:03Z Optically tuned terahertz modulator based on annealed multilayer MoS2 Cao, Y. Gan, S. Geng, Z. Liu, Jian Yang, Y. Bao, Q. Chen, H. Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS 2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS 2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS 2 -based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS 2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch. 2016 Journal Article http://hdl.handle.net/20.500.11937/71591 10.1038/srep22899 http://creativecommons.org/licenses/by/4.0/ Nature Publishing Group fulltext
spellingShingle Cao, Y.
Gan, S.
Geng, Z.
Liu, Jian
Yang, Y.
Bao, Q.
Chen, H.
Optically tuned terahertz modulator based on annealed multilayer MoS2
title Optically tuned terahertz modulator based on annealed multilayer MoS2
title_full Optically tuned terahertz modulator based on annealed multilayer MoS2
title_fullStr Optically tuned terahertz modulator based on annealed multilayer MoS2
title_full_unstemmed Optically tuned terahertz modulator based on annealed multilayer MoS2
title_short Optically tuned terahertz modulator based on annealed multilayer MoS2
title_sort optically tuned terahertz modulator based on annealed multilayer mos2
url http://hdl.handle.net/20.500.11937/71591