Switching of Current Rectification Ratios within a Single Nanocrystal by Facet-Resolved Electrical Wiring

Here we show that within a single polyhedral metal oxide nanoparticle a nanometer-scale lateral or vertical sliding of a small metal top contact (e.g., <50 nm) leads to a 10-fold change in current rectification ratios. Electron tunnelling imaging and constant-force current-potential analysis...

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Main Authors: Vogel, Yan, Zhang, Jinyang, Darwish, Nadim, Ciampi, Simone
Format: Journal Article
Published: American Chemical Society 2018
Online Access:https://pubs.acs.org/doi/ipdf/10.1021/acsnano.8b02934
http://hdl.handle.net/20.500.11937/69877
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author Vogel, Yan
Zhang, Jinyang
Darwish, Nadim
Ciampi, Simone
author_facet Vogel, Yan
Zhang, Jinyang
Darwish, Nadim
Ciampi, Simone
author_sort Vogel, Yan
building Curtin Institutional Repository
collection Online Access
description Here we show that within a single polyhedral metal oxide nanoparticle a nanometer-scale lateral or vertical sliding of a small metal top contact (e.g., <50 nm) leads to a 10-fold change in current rectification ratios. Electron tunnelling imaging and constant-force current-potential analysis in atomic force microscopy demonstrate that within an individual p-n rectifier (a Cu2O nanocrystal on silicon) the degree of current asymmetry can be modulated predictably by a set of geometric considerations. We demonstrate the concept of a single nanoscale entity displaying an in-built range of discrete electrical signatures and address fundamental questions in the direction of "landing" contacts in single-particle diodes. This concept is scalable to large 2D arrays, up to millimetres in size, with implications in the design and understanding of nanoparticle circuitry.
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spelling curtin-20.500.11937-698772023-06-07T04:32:01Z Switching of Current Rectification Ratios within a Single Nanocrystal by Facet-Resolved Electrical Wiring Vogel, Yan Zhang, Jinyang Darwish, Nadim Ciampi, Simone Here we show that within a single polyhedral metal oxide nanoparticle a nanometer-scale lateral or vertical sliding of a small metal top contact (e.g., <50 nm) leads to a 10-fold change in current rectification ratios. Electron tunnelling imaging and constant-force current-potential analysis in atomic force microscopy demonstrate that within an individual p-n rectifier (a Cu2O nanocrystal on silicon) the degree of current asymmetry can be modulated predictably by a set of geometric considerations. We demonstrate the concept of a single nanoscale entity displaying an in-built range of discrete electrical signatures and address fundamental questions in the direction of "landing" contacts in single-particle diodes. This concept is scalable to large 2D arrays, up to millimetres in size, with implications in the design and understanding of nanoparticle circuitry. 2018 Journal Article http://hdl.handle.net/20.500.11937/69877 10.1021/acsnano.8b02934 https://pubs.acs.org/doi/ipdf/10.1021/acsnano.8b02934 http://purl.org/au-research/grants/arc/DE160100732 http://purl.org/au-research/grants/arc/DE160101101 American Chemical Society fulltext
spellingShingle Vogel, Yan
Zhang, Jinyang
Darwish, Nadim
Ciampi, Simone
Switching of Current Rectification Ratios within a Single Nanocrystal by Facet-Resolved Electrical Wiring
title Switching of Current Rectification Ratios within a Single Nanocrystal by Facet-Resolved Electrical Wiring
title_full Switching of Current Rectification Ratios within a Single Nanocrystal by Facet-Resolved Electrical Wiring
title_fullStr Switching of Current Rectification Ratios within a Single Nanocrystal by Facet-Resolved Electrical Wiring
title_full_unstemmed Switching of Current Rectification Ratios within a Single Nanocrystal by Facet-Resolved Electrical Wiring
title_short Switching of Current Rectification Ratios within a Single Nanocrystal by Facet-Resolved Electrical Wiring
title_sort switching of current rectification ratios within a single nanocrystal by facet-resolved electrical wiring
url https://pubs.acs.org/doi/ipdf/10.1021/acsnano.8b02934
https://pubs.acs.org/doi/ipdf/10.1021/acsnano.8b02934
https://pubs.acs.org/doi/ipdf/10.1021/acsnano.8b02934
http://hdl.handle.net/20.500.11937/69877