Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes.
Silicon (Si) requires a protection layer to maintain stable and long-time photoanodic reaction. However, poor charge separation and transfer are key constraint factors in protection layer/Si photoanodes that reduce their water-splitting efficiency. Here, a simultaneous enhancement of charge separati...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
| Published: |
Wiley - V C H Verlag GmbH & Co. KGaA
2018
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| Online Access: | http://hdl.handle.net/20.500.11937/69737 |
| _version_ | 1848762121198764032 |
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| author | Zheng, Jianyun Lyu, Y. Xie, C. Wang, R. Tao, L. Wu, H. Zhou, H. Jiang, San Ping Wang, S. |
| author_facet | Zheng, Jianyun Lyu, Y. Xie, C. Wang, R. Tao, L. Wu, H. Zhou, H. Jiang, San Ping Wang, S. |
| author_sort | Zheng, Jianyun |
| building | Curtin Institutional Repository |
| collection | Online Access |
| description | Silicon (Si) requires a protection layer to maintain stable and long-time photoanodic reaction. However, poor charge separation and transfer are key constraint factors in protection layer/Si photoanodes that reduce their water-splitting efficiency. Here, a simultaneous enhancement of charge separation and transfer in Nb-doped NiOx /Ni/black-Si photoanodes induced by plasma treatment is reported. The optimized photoanodes yield the highest charge-separation efficiency (?sep ) of ˜81% at 1.23 V versus reversible hydrogen electrode, corresponding to the photocurrent density of ˜29.1 mA cm-2 . On the basis of detailed characterizations, the concentration and species of oxygen defects in the NiOx -based layer are adjusted by synergistic effect of Nb doping and plasma treatment, which are the dominating factors for forming suitable band structure and providing a favorable hole-migration channel. This work elucidates the important role of oxygen defects on charge separation and transfer in the protection layer/Si-based photoelectrochemical systems and is encouraging for application of this synergistic strategy to other candidate photoanodes. |
| first_indexed | 2025-11-14T10:42:32Z |
| format | Journal Article |
| id | curtin-20.500.11937-69737 |
| institution | Curtin University Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-14T10:42:32Z |
| publishDate | 2018 |
| publisher | Wiley - V C H Verlag GmbH & Co. KGaA |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | curtin-20.500.11937-697372018-12-10T06:20:27Z Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes. Zheng, Jianyun Lyu, Y. Xie, C. Wang, R. Tao, L. Wu, H. Zhou, H. Jiang, San Ping Wang, S. Silicon (Si) requires a protection layer to maintain stable and long-time photoanodic reaction. However, poor charge separation and transfer are key constraint factors in protection layer/Si photoanodes that reduce their water-splitting efficiency. Here, a simultaneous enhancement of charge separation and transfer in Nb-doped NiOx /Ni/black-Si photoanodes induced by plasma treatment is reported. The optimized photoanodes yield the highest charge-separation efficiency (?sep ) of ˜81% at 1.23 V versus reversible hydrogen electrode, corresponding to the photocurrent density of ˜29.1 mA cm-2 . On the basis of detailed characterizations, the concentration and species of oxygen defects in the NiOx -based layer are adjusted by synergistic effect of Nb doping and plasma treatment, which are the dominating factors for forming suitable band structure and providing a favorable hole-migration channel. This work elucidates the important role of oxygen defects on charge separation and transfer in the protection layer/Si-based photoelectrochemical systems and is encouraging for application of this synergistic strategy to other candidate photoanodes. 2018 Journal Article http://hdl.handle.net/20.500.11937/69737 10.1002/adma.201801773 Wiley - V C H Verlag GmbH & Co. KGaA restricted |
| spellingShingle | Zheng, Jianyun Lyu, Y. Xie, C. Wang, R. Tao, L. Wu, H. Zhou, H. Jiang, San Ping Wang, S. Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes. |
| title | Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes. |
| title_full | Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes. |
| title_fullStr | Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes. |
| title_full_unstemmed | Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes. |
| title_short | Defect-Enhanced Charge Separation and Transfer within Protection Layer/Semiconductor Structure of Photoanodes. |
| title_sort | defect-enhanced charge separation and transfer within protection layer/semiconductor structure of photoanodes. |
| url | http://hdl.handle.net/20.500.11937/69737 |