Carbon diffusion in alumina from carbon and Ti2AlC thin films
Carbon diffusion is observed in single crystal a-Al2O3 substrates from carbon and Ti2AlC thin filmssynthesized via pulsed cathodic arc deposition. Diffusion was found to occur at substratetemperatures of 570 C and above. The diffusion coefficient of carbon in a-Al2O3 is estimated to beof the order 3...
| Main Authors: | , , , , |
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| Format: | Journal Article |
| Published: |
American Institute of Physics
2011
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| Online Access: | http://hdl.handle.net/20.500.11937/6561 |
| Summary: | Carbon diffusion is observed in single crystal a-Al2O3 substrates from carbon and Ti2AlC thin filmssynthesized via pulsed cathodic arc deposition. Diffusion was found to occur at substratetemperatures of 570 C and above. The diffusion coefficient of carbon in a-Al2O3 is estimated to beof the order 3 1013 cm2/s for deposition temperatures in the 570–770 C range by examiningelastic recoil detection analysis (ERDA) elemental depth profiles. It is suggested that an appropriatediffusion barrier may be useful when depositing carbon containing thin films on a-Al2O3 substratesat high temperatures. |
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