Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics

By using three-point bending tests, the effects of an applied DC electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics are investigated. Under combined mechanical-voltage-electrical current loading, the corresponding stress and electric fields and carrier di...

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Main Authors: Qin, G., Ma, S., Lu, Chunsheng, Wang, G., Zhao, M.
Format: Journal Article
Published: Elsevier Science Ltd 2017
Online Access:http://hdl.handle.net/20.500.11937/61496
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author Qin, G.
Ma, S.
Lu, Chunsheng
Wang, G.
Zhao, M.
author_facet Qin, G.
Ma, S.
Lu, Chunsheng
Wang, G.
Zhao, M.
author_sort Qin, G.
building Curtin Institutional Repository
collection Online Access
description By using three-point bending tests, the effects of an applied DC electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics are investigated. Under combined mechanical-voltage-electrical current loading, the corresponding stress and electric fields and carrier distribution in specimens are analyzed based on the finite element method. It is shown that, when an electric field of 0.95kVcm -1 is applied, the bending strength decreases by 14.7% and then, remains unchangeable with further increase of the electric field. In contrast, the bending strength decreases from 11.5 to 8.5MPa as the applied electric current increases from 0 to 5 × 10 4 Am -2 . The results imply that there is a strong correlation between the bending strength and electric field or current for piezoelectric semiconductive ceramics.
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institution Curtin University Malaysia
institution_category Local University
last_indexed 2025-11-14T10:19:46Z
publishDate 2017
publisher Elsevier Science Ltd
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spelling curtin-20.500.11937-614962018-07-09T05:59:31Z Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics Qin, G. Ma, S. Lu, Chunsheng Wang, G. Zhao, M. By using three-point bending tests, the effects of an applied DC electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics are investigated. Under combined mechanical-voltage-electrical current loading, the corresponding stress and electric fields and carrier distribution in specimens are analyzed based on the finite element method. It is shown that, when an electric field of 0.95kVcm -1 is applied, the bending strength decreases by 14.7% and then, remains unchangeable with further increase of the electric field. In contrast, the bending strength decreases from 11.5 to 8.5MPa as the applied electric current increases from 0 to 5 × 10 4 Am -2 . The results imply that there is a strong correlation between the bending strength and electric field or current for piezoelectric semiconductive ceramics. 2017 Journal Article http://hdl.handle.net/20.500.11937/61496 10.1016/j.ceramint.2017.11.219 Elsevier Science Ltd restricted
spellingShingle Qin, G.
Ma, S.
Lu, Chunsheng
Wang, G.
Zhao, M.
Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics
title Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics
title_full Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics
title_fullStr Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics
title_full_unstemmed Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics
title_short Influence of electric field and current on the strength of depoled GaN piezoelectric semiconductive ceramics
title_sort influence of electric field and current on the strength of depoled gan piezoelectric semiconductive ceramics
url http://hdl.handle.net/20.500.11937/61496